New NVM Architecture Could Open Up Xpoint Market
By Gary Hilson 08.11.2020
TORONTO — A new combination of materials may enable 3D vertical non-volatile memory (NVM) architecture for customers to design chips for high density, high performance computing applications at affordable costs and even shape the second iteration of 3D Xpoint technology.
Intermolecular Inc., a wholly-owned subsidiary of Merck KGaA, Darmstadt, Germany, recently announced it has developed what it believes is the first quaternary atomic layer deposition (ALD) GeAsSeTe OTS device for 3D vertical memory arrays. This device overcomes the inability to stack tens of layers in a 3D structure, which limits memory density and results in higher costs, said Intermolecular device engineer Mario Laudato. The company’s new material combination can help to realize these architectures, which would support emerging use cases such as artificial intelligence (AI) and neuromorphic computing, and other semiconductor designs necessary for faster and more affordable digital applications.
Founded in Silicon Valley in 2004, Intermolecular develops workflows that physically and electrically characterize thin films and film stack for material innovation in the memory, logic, ferroelectrics and quantum computing fields. It became part of Merck KGaA last year. In a telephone interview with EE Times, Laudato said its device for 3D vertical memory arrays could potentially help evolve 3D Xpoint technology. “The semiconductor industry is spending huge amounts of resources in R&D to fill the gap between DRAM and NAND flash,” he said, “and probably we will add more companies working in this market and releasing product with 3D Xpoint technology.”
Intermolecular’s new approach involves the use of ALD chalcogenides in lieu of the current PVD process for 3D Xpoint, which limits film conformality and homogeneity on a large scale, he said, and as a result, precludes the integration of tens of decks in a 3D Xpoint architecture. By employing ALD chalcogenides, Intermolecular’s process enables future 3D vertical integration with higher density.
continues at eetimes.com |
