Two major GaN-on-SiC production camps forming in Taiwan
digitimes.com
Nuying Huang, Taipei; Willis Ke, DIGITIMES Monday 21 September 2020 0 Toggle Dropdown
Taiwan-based solar module maker Tainergy Tech reportedly has sent samples of its newly developed semi-insulating SiC (silicon carbide) substrates for validation by GaAs foundry specialist Win Semiconductors, which is building its GaN-on-SiC production ecosystem, according to industry sources.
Two major production camps for GaN-on-SiC and other third-generation semiconductors are forming in Taiwan. Besides the one led by Win Semi, another camp is headed by Sino-American Silicon Products (SAS), which has become the largest shareholder of another GaAs foundry Advanced Wireless Semiconductor after purchasing a 22.53% stake in AWSC for NT$3.5 billion (US$119.45 million) in early August 2020, the sources said.
This is expected to help boost Taiwan's self-sufficiency of GaN-on-SiC substrates needed to support the country's development of 5G and satellite applications, the sources commented, adding that the applications could be crippled by shortages of such substrates, citing recent remarks by Win Semi's chairman Dennis Chen.
Win Semi now has a monthly capacity of 500 GaN-on-SiC epi wafers for RF devices for 5G infrastructure applications. The company has newly purchased one MOCVD machine exclusively for producing such epi wafers and is expected to forge closer partnership with Tainergy.
In terms of applications, semi-insulating SiC substrates now command a market share of 20%, compared to 80% for conductive ones. In Taiwan, only Tainergy and SAS affiliate GlobalWafers supply both types of SiC substrates, and other local peers focus on conductive offerings, the sources said.
Global supply of semi-insulating SiC substrates, now mostly for military applications, is dominated by US-based suppliers Cree and II-VI. They are also major suppliers of conductive substrates, mainly for high-power devices, power charging and EV applications, and many clients have signed long-term contracts with them to secure stable supply of conductive SiC components, the sources indicated.
Many countries are stepping up the development of SiCs, especially semi-insulating ones, as strategic materials for 5G applications. China, for instance, has decided to invest CNY10 trillion (US$1.44 trillion) in developing SiC and other third-generation semiconductor materials, as part of its 14th five-year plan spanning 2021-2025, the sources added. |
