| | | Started construction of a silicon carbide material plant worth 150 billion won in China
kipost.net
A production facility that can mass-produce silicon carbide materials, which is attracting attention as a'third generation semiconductor' in China, will be built. According to Wang Ziwei, a Chinese media outlet on the 15th, the Nansha Jingyuan Semiconductor Technology Co., Ltd. (hereinafter referred to as Nansha Jingyuan) in Guangzhou, China, has initiated the construction of a silicon carbide (SiC) single crystal material and wafer production line in Nansha District of Guangzhou City. The groundbreaking ceremony was held. Construction of the factory started on the 10th. The land occupied area is 22,81 m2, and the total building area is 51,162,700 m2. On January 25 this year, Nansha District, Guangzhou, announced the ``Silicone Carbide Materials |
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