IBM DUMIC Paper Highlights Process Results of Integrated
F-HDP/PECVDProcess for Production Use
Novellus Systems, Inc. (NASDAQ:NVLS), the productivity and
innovation leader in thin film deposition, today announced the first
high-volume production implementation of a chemical vapor deposited
(CVD) low dielectric constant (low-K) fluorinated High Density Plasma
(F-HDP) film for 0.25-micron logic devices. Low-K dielectrics have
been widely recognized as a way to maximize the speeds of advanced
logic devices because they reduce total device capacitance.
In a paper published by IBM Corp. at the Dielectrics for ULSI
Multilevel Interconnect Conference, (DUMIC), held in Santa Clara,
Calif. this week, IBM reported a total line-to-line capacitance
reduction of 12 percent using an F-HDP film as an intermetal
dielectric (IMD). According to the paper, this capacitance reduction
enables significant increases in clock speeds of the company's most
advanced microprocessors.
The integration sequence described in the publication combines an
F-HDP gap-fill process with an in-situ plasma-enhanced CVD (PECVD)
capping layer. This delivers as much as a 50 percent reduction in
the overall cost of ownership when compared to conventional IMD
schemes where the entire deposition is done by HDP.
Wilbert van den Hoek, vice president of Novellus' Dielectrics
division, said, "The capacitance reduction and cost-of-ownership
improvements shown make this integrated F-HDP/PECVD process the
preferred solution for sub-0.25-micron IMD applications. Novellus
offers this advanced process on integrated SPEED HDP systems, which
are already in wide-spread volume production. By offering such
enabling applications on existing equipment, we continue to help our
customers develop and implement new technologies while extending
their capital investment."
James Mitchener, general manager of the Dielectrics division,
said, "The ability to provide a proprietary, in-situ PECVD capping
layer is unique to the integrated Novellus SPEED systems. Along with
productivity and cost-of-ownership advantages, the material
characteristics of this capping layer provide device protection from
the detrimental effects of long term fluorine migration that are seen
with single film F-HDP processes."
Mitchener said that the company has been working with several
customers for over a year to develop a manufacturable F-HDP solution.
"Our single tool F-HDP/PECVD integration has provided a complete
solution with a wide process window for production implementation.
This is also consistent with Novellus' commitment to provide
customers with advanced technology at the lowest cost," Mitchener
noted.
A typical two micron IMD stack using F-HDP and PECVD can be
deposited in the Novellus integrated SPEED system at throughputs
greater than 30 wafers per hour, the industry's highest for advanced
CVD IMD applications.
This implementation in high-volume production of the low-K F-HDP
film is the latest validation of the success of the Novellus SPEED
HDP system. Since its introduction in February 1996, the SPEED
system has attained market leadership in HDP and has become the IMD
process tool of record for the world's most advanced semiconductor
fabs. Based on current data from independent market research firm,
Dataquest (San Jose, Calif.), Novellus SPEED HDP systems have
captured more than 65 percent of the worldwide HDP market. |
