ASML’s eScan 2200 rollout significantly boosts EUV throughput by increasing source power to over 500W, enabling up to 50 more wafers per hour (WPH) in NXE:3800 systems—but gains are partially limited by stage mechanics and dose constraints.
Here’s a detailed breakdown of how the eScan 2200 and its associated upgrades affect EUV lithography throughput:
Key Enhancements in ASML’s eScan 2200 Platform
- EUV Source Power Increase: The system pushes EUV source power beyond 500W, a major leap from the ~250W used in current mass production. This is achieved through:
- Improved droplet generator for tin plasma.
- Higher-power CO2 drive laser.
- Enhanced collector optics.
- Advanced plasma control systems.
- Throughput Gains: The NXE:3800 scanner, powered by this source, delivers up to +50 WPH improvement in throughput. However, actual gains are stage-limited—meaning mechanical acceleration/deceleration of the wafer stage and dose uniformity cap the full benefit.
- High NA Compatibility: The eScan 2200 is designed to support High Numerical Aperture (NA > 0.55) systems, which are critical for sub-2nm nodes. These require even higher EUV doses, making source power increases essential.
Limitations and Bottlenecks
- Nonlinear Throughput Scaling: Doubling source power doesn’t double throughput. For example, a 100% power increase may yield only ~75% WPH gain due to dose constraints and mechanical limits.
- Stage Mechanics: The wafer stage’s ability to move and settle quickly becomes a bottleneck at higher scan speeds.
- Dose Uniformity: Higher power must still maintain consistent dose across the wafer, which requires precision control and may slow scanning.
Strategic Implications
- For Foundries: TSMC, Samsung, and Intel can leverage eScan 2200 to reduce cost per wafer and improve cycle time—especially for AI and HPC chips.
- For OpenAI’s Stargate: If OpenAI’s chip partners adopt High NA EUV, eScan 2200’s throughput boost becomes essential to meet wafer demand.
- For ASML: This rollout strengthens ASML’s dominance in EUV and positions it as the sole enabler of next-gen lithography scaling.
Let me know if you want to compare NXE:3800 vs High NA EXE:5200 or map how many tools are needed to meet Stargate’s projected wafer volume. |
