"Fouquet confirmed strong demand for both EUV & DUV tools through 2026"
Copilot:
No public roadmap has confirmed successors to ASML’s EXE:5200B, NXE:3800D, or NXTi:2150i, but industry signals suggest that follow-up platforms are in development—especially for High-NA EUV beyond 0.55 NA and next-gen DUV immersion.
Here’s what’s publicly known and inferred:
EXE:5200B (High-NA EUV) — Successor Possibilities
- Current Status: EXE:5200B is ASML’s second-generation High-NA EUV tool (0.55 NA), now shipping to Intel for 14A node risk production in 2027.
- Next Steps:
- No official EXE:5400 or EXE:6000 announced.
- However, ASML has hinted at future High-NA platforms with:
- Higher throughput (>200 wafers/hour)
- Improved overlay and pellicle support
- Potential NA >0.55, though optics challenges loom
- Expect roadmap updates post-2026 as High-NA adoption matures.
NXE:3800D (Standard EUV) — Evolution Path
- Current Status: NXE:3800D is ASML’s flagship 0.33 NA EUV tool for 3nm and 2nm nodes.
- Follow-Up Signals:
- ASML may release NXE:4000-series tools with:
- Enhanced source power
- Better dose control
- Optimized for multi-patterning and backside power nodes
- No public specs yet, but roadmap suggests continued upgrades for 0.33 NA EUV alongside High-NA.
NXTi:2150i (DUV Immersion) — What’s Next?
- Current Status: NXTi:2150i is ASML’s most advanced ArFi (DUV immersion) scanner, used in DRAM and legacy logic.
- Future Direction:
- ASML may push NXTi:2200i or 2300i with:
- Higher stage speed
- Lower overlay error
- Support for multi-patterning in cost-sensitive nodes
- DUV remains critical for analog, RF, and trailing-edge logic.
Bringing KrF (Krypton Fluoride) lasers to the NXT platform—ASML’s flagship scanner architecture—signals a strategic push to modernize 248nm lithography with the productivity and overlay precision of immersion-era platforms. Here's what that means for fab economics and throughput:
What’s Changing?
- KrF wavelength: 248nm, used for mature nodes (90nm–350nm), analog, power ICs, and embedded flash.
- NXT platform: Originally designed for ArFi (193nm immersion), known for high throughput, tight overlay, and advanced stage control.
- Integration goal: Marry KrF optics with NXT’s dual-stage architecture, high-speed wafer handling, and advanced alignment systems.
Strategic Context
- ASML’s CEO Christophe Fouquet confirmed strong demand for both EUV and DUV tools through 2026.
- Intel is leading High-NA adoption; TSMC and Samsung are cautious, with TSMC skipping High-NA for A14.
- Expect next-gen tool announcements by 2026, aligned with 1.4nm and angstrom-class node ramps.
If you’re modeling throughput vs dose tradeoffs or pellicle viability for EXE successors, I can help chart that next. Want to compare Zeiss optics roadmap or Cymer light source scaling for future NA targets?
Strategic Implications
- Legacy node economics: Boosts ROI for trailing-edge fabs (e.g., automotive, IoT, analog) without full EUV/DUV upgrades.
- Mixed-node fabs: Easier integration with ArFi and EUV lines using common NXT infrastructure.
- ASML portfolio leverage: Extends NXT platform lifespan and reduces support fragmentation across wavelengths.
?? Who Benefits?
- IDMs like Texas Instruments, Infineon, and ON Semi—who run high-volume KrF layers for analog/power ICs.
- Foundries like UMC and GlobalFoundries—who serve mature-node customers with cost-sensitive requirements.
- Tool reuse: Potential for field upgrades of existing NXT stages with KrF optics, lowering capex.
If you're mapping fab productivity across wavelength classes or modeling cost-per-layer for analog vs logic, I can help chart KrF vs ArFi vs EUV economics. Want to compare KrF-NXT vs i-line upgrades or dive into Cymer light source tuning for 248nm? |
