Intel 30K EXE wafer/day in actual production.
Yes—Intel has begun using ASML’s High-NA EUV EXE systems in actual production, processing over 30,000 wafers in a single quarter at its Oregon facility. These tools are being used for development and early ramp of Intel’s 14A node.
What Is EXE and Why It Matters
- EXE refers to ASML’s High Numerical Aperture EUV lithography systems, specifically the Twinscan EXE:5000 and EXE:5200.
- These machines offer higher resolution (down to 8 nm) and single-exposure patterning, replacing multi-patterning steps used in Low-NA EUV.
- Intel is using EXE tools to reduce lithography steps from ~40 to single digits, improving yield and throughput.
Intel’s Production Status
- Two EXE:5000 systems are installed at Intel’s D1 development fab in Oregon, actively processing wafers for 14A node development.
- Intel claims these tools are twice as reliable as previous EUV systems and have already processed 30,000 wafers in one quarter.
- While ASML classifies EXE:5000 as pre-production, Intel is using them for real wafer runs, not just simulations or test exposures.
Roadmap & Implications
- Intel plans to use EXE tools for critical layers in 14A and beyond, not full-chip patterning.
- The EXE:5200, ASML’s second-gen High-NA tool, is expected to ship to Intel soon, likely for volume ramp in 2026.
- Intel’s early adoption gives it a strategic edge over TSMC and Samsung, who are expected to use High-NA EUV later (TSMC by ~2028).
Intel’s integration of EXE tools into actual wafer processing marks a major lithography milestone. It’s not just a lab demo—it’s real production groundwork for 14A and future nodes. Want to dive into how High-NA EUV compares with multi-patterned Low-NA in terms of cost, overlay, and defectivity? |
