Nearfield Instruments Signs Multi-Year Development Project to Advance Semiconductor Metrology
Shannon Davis
2 hours ago
Nearfield Instruments, the leader in 3D, non-destructive, in-line process control solutions based on scanning probe technology, today announced a strategic development project to accelerate innovation in semiconductor metrology.
As part of a multi-year collaboration, Nearfield Instruments will deploy its flagship system, QUADRA, at Imec’s advanced R&D facility in Leuven. The two organizations will jointly develop next-generation metrology solutions to address critical challenges across the semiconductor manufacturing value chain, including:
- High-NA EUV Lithography Metrology
Development and characterization of high-NA EUV resist 3D metrology using Nearfield’s proprietary High-Aspect-Ratio (HAR) imaging mode (FFTP) to improve scanner productivity. - 3D Profiling of Advanced Logic Devices
Enabling precise characterization of high-aspect-ratio structures such as Complementary Field-Effect Transistors (CFETs) through QUADRA’s proprietary side-wall imaging mode. - 3D Heterogeneous Integration Metrology
Enhancing metrology and inspection capabilities for 3D integration and hybrid bonding (wafer-to-wafer, die-to-wafer). Applications include copper pad and dielectric roughness, erosion, dishing, full-die imaging, and edge roll-off, leveraged by Nearfield Instruments’ Ultra-Large Scanning Area (ULSA) technology, which combines high throughput with nanometer-level resolution.
“Partnering with Imec allows us to push the boundaries of what is possible in semiconductor manufacturing process control,” said Dr. Hamed Sadeghian, CEO of Nearfield Instruments.
“Together, we’re tackling grand metrology challenges, from 3D profiling of CFETs to hybrid bonding characterization, and enabling the next leap in High-NA EUV lithography through full 3D resist imaging. These innovations are critical for the AI-chip era, where precision, speed, and scalability in metrology directly determine performance, energy efficiency, and yield. QUADRA is built to meet those demands.”
Luc van den Hove, CEO of IMEC, adds: “Advanced metrology solutions are essential to overcoming the complex challenges facing the semiconductor industry today. By combining state-of-the-art research and innovative technologies, we are paving the way for transformative advancements that will support the future of chip manufacturing and enable the continued progress of the digital era. We are happy to see European initiatives to develop advanced equipment solutions addressing some of the pressing needs and want to leverage our pilot line to demonstrate some of these capabilities.”
This collaboration marks a significant step forward in bridging cutting-edge metrology innovation with advanced semiconductor process development. By combining Nearfield Instruments’ proven technology with Imec’s visionary research programs, the partnership aims to deliver impactful solutions that will shape the future of chip manufacturing.
Copilot:
Competitive Overlap- Overlap: Both aim to solve next-gen metrology challenges for EUV and advanced logic/3D integration. They compete in the sense that fabs must choose between e-beam-centric inspection (ASML HMI) and scanning probe-based 3D metrology (Nearfield) for certain applications.
- Differentiation:
- ASML HMI is strongest in defect detection and integration with lithography scanners.
- Nearfield QUADRA is strongest in 3D structural characterization and hybrid bonding analysis.
- Strategic Positioning: Nearfield is carving out a niche where traditional e-beam tools struggle with aspect ratio and 3D fidelity, while ASML HMI dominates in high-volume defect inspection
Exactly — the relationship between Nearfield Instruments (QUADRA) and ASML HMI is best described as both competitive and complementary, depending on the application space:
Competitive Dimensions- Market overlap: Both target advanced-node metrology challenges in EUV and 3D integration.
- Customer choice: Fabs may evaluate whether to invest in e-beam inspection (ASML HMI) or scanning probe 3D metrology (Nearfield) for certain process steps.
- Positioning: Nearfield emphasizes true 3D profiling and hybrid bonding analysis, while HMI emphasizes high-throughput defect inspection. In areas like EUV resist characterization or CFET profiling, Nearfield is directly challenging HMI’s metrology relevance.
Complementary Dimensions- Different strengths:
- ASML HMI ? excels at defect detection, voltage contrast, and integration with lithography scanners.
- Nearfield QUADRA ? excels at structural fidelity, side-wall imaging, and hybrid bonding roughness.
- Workflow synergy: A fab could use HMI tools for defect inspection and QUADRA for 3D structural analysis, creating a fuller picture of process health.
- Technology diversity: E-beam vs. scanning probe approaches solve different pain points — together they broaden the metrology toolkit.
Net Effect
So yes — it’s as much complementary as competitive.
- Competitive when fabs must allocate capex and decide which tool addresses their most urgent bottleneck.
- Complementary when fabs integrate both, leveraging HMI for defect maps and Nearfield for 3D fidelity.
Implication
Yes, Nearfield Instruments does compete with ASML HMI, but not head-to-head across the entire metrology space. Instead, it’s a complementary/alternative approach:
- HMI ? defect inspection, 2D/e-beam-centric metrology
- Nearfield ? 3D profiling, hybrid bonding, EUV resist characterization
Yes — your reasoning is very logical. Let’s break it down in the semiconductor fab context:
Economics of EUV Wafers- A single EUV wafer can cost ~$30,000 once you factor in the lithography exposure, resist, and processing overhead.
- At that price point, every defect or yield loss is extremely expensive — even a small percentage of scrap translates into millions of dollars per month at high-volume fabs.
Competitive Pressure- With fierce competition at advanced nodes (3nm, 2nm, and beyond), fabs cannot afford yield excursions.
- Companies are under pressure to deliver maximum uptime, highest yield, and lowest cost per transistor.
- This drives fabs to adopt redundant or complementary metrology solutions rather than relying on a single toolset.
Why Both HMI and Nearfield Make Sense- ASML HMI (e-beam) ? excels at defect inspection, voltage contrast, and integration with lithography scanners. It’s the “eyes” for spotting random defects.
- Nearfield QUADRA (scanning probe) ? excels at 3D profiling, hybrid bonding analysis, and structural fidelity. It’s the “microscope” for ensuring bonding and integration quality.
- Together:
- HMI reduces random defect risk.
- QUADRA ensures structural integrity in 3D integration and EUV resist characterization.
- Using both minimizes the chance of missing yield-killing issues.
Logical Conclusion
Given the high wafer cost and competitive stakes, fabs are rational to deploy both toolsets in parallel.
- It’s not wasteful redundancy — it’s risk mitigation.
- The incremental capex for dual metrology is small compared to the potential losses from yield excursions.
- In fact, many leading fabs already adopt a multi-tool metrology strategy for exactly this reason.
So yes, Mike — using both ASML HMI and Nearfield QUADRA is not just prudent, it’s strategically necessary in the EUV era. |
