Hitachi -- the .10 to .13 micron tools are falling into place. It seems early to me, but it's nice to know that the tools are in place to make it a reality.
nikkeibp.asiabiztech.com
Hitachi Markets Microscope for 0.10-0.13 Micron ICs
March 12, 1998 (TOKYO) -- Hitachi Ltd. developed the HD-2000 microscopic
instrument to view 0.10-0.13 micronmeter rule microchips or integrated circuits.
The new instrument reportedly makes it as easy to see those parts as does a
scanning electron microscope (SEM).
To date, it has been necessary to use a transmission electron microscope (TEM)
to observe such a thin film. Sample preparation for the TEM, however, has been
so difficult that a specialized technician needed to do it.
The new instrument is easy enough for a wafer process engineer to use, Hitachi
officials said.
The new instrument provides transmitted electrons to observe the thin film,
irradiating the sample with a sharpened electron beam. Unlike TEM, in which the
sample has to be irradiated broadly with electron beams, the electron-beam
intensity can easily be increased to be free from the preparation of thin films that
was required for TEM observation.
TEM uses a fluorescent plate to produce a transmitted electron image. The
present instrument uses a high-sensitive detector to provide electric signals of
transmitted electrons. Consequently, it is possible to fine-tune observations by
watching a monitor screen, similar to the procedure for a SEM.
Its resolution is 0.4nm, and magnification is 1-2,000,000. The maximum sample
size is 4mm x 0.5mm x 0.3mm. The acceleration voltage is 200 kV. It is priced at
160 million yen (US$1.26 million).
More information is available in English at:
hitachi.co.jp
(Nikkei Microdevices)
From the Hitachi link above:
March 3, 1998
Hitachi to Market a New Semiconductor Ultra-thin Film Evaluation System Featuring High Sample Throughput and High Image Contrast
- Nanometer observation with a user-friendly operating design -
Hitachi, Ltd.(NYSE:HIT) today announced that it will introduce a new ultra- thin film evaluation system, the HD-2000,
for use in semiconductor and other electronic industries. The HD-2000 was developed in response to the need for high
sample throughput, measurement and analysis of advanced semiconductor devices and other advanced materials. It has
a maximum magnification of 2 million times, which is comparable to that available using a transmission electron
microscope (TEM). But it is as easy to operate as a scanning electron microscope (SEM). Marketing will start on
March 4.
By developing an electron optical system that achieves outstanding image brightness at its 0.4 nm (nanometer) resolution,
Hitachi, Ltd. has made possible high contrast image observation of insulating films such as thin film oxide in gate areas of
semiconductor devices. The HD- 2000 has high sensitivity in elemental analysis 2 times better than the conventional
TEM method. As such, it is a powerful tool for development and analysis of advanced semiconductor devices and other
advanced materials.
Semiconductor devices are moving toward higher circuit integration and density with smaller features sizes as well as
higher performance. For development and failure analysis of these advanced devices, high magnification observation of
fine structures as well as high sensitivity elemental analysis of small particles have become important not only for R & D
but also for quality control in production lines.
Until now, high resolution SEMs have been mainly used for observation and analysis of semiconductor devices. When
the design rules move from 0.25 to 0.18 to 0.13 micrometers or even smaller, gate oxide thickness will be reduced
down to a few nm. Fine process control on the order of 1 nm will be required. It is difficult for high resolution SEMs to
make such small objects clearly visible for device designers and process engineers.
Although TEMs are well known for their high resolution capability and have already been used for observation of
semiconductor devices in laboratories, TEMs are basically laboratory instruments and require skilled operators. These
instruments also require delicate and time-consuming sample preparations which also require experienced technicians. It
takes a couple of days to produce pictures of the area of interest. This makes TEMs unacceptable for most
semiconductor fabs.
In the HD-2000, samples are illuminated by a powerful beam of electrons. After passing through the sample, these
electrons enter a high sensitivity sensor where they are converted to a digital image for display on a monitor screen.
Electronically recorded digital images allow direct measurement of key parameters on the screen. The images can be
processed or transmitted through a network to anywhere they are needed.
For quick and accurate sample preparation, a separate focused ion beam system is also available. It can process a
sample of interest mounted on a compatible holder at a thickness of 0.1 micrometers about a point of interest within 3-4
hours. This compatible holder can be positioned in the HD-2000 without remounting the prepared samples so that
observation and analysis can be done most efficiently and without help of experienced engineers. In addition, it is quick
to produce results.
It takes about 4-5 hours to produce pictures and/or analysis from wafer samples. This is 20 to 30 times quicker than the
conventional TEM method.
Price and delivery
Product name
Price
Shipment
HD-2000
160 million yen
August 1998
Features
(1) Simple operation, high contrast and high resolution image observation.
1) Direct image observation on a viewing monitor screen at a resolution of 0.4 nm.
2) Operation, observation and image recording are all possible in normal lighting conditions. No darkroom facility
is required.
3) Insulating film samples such as gate oxide of a semiconductor device can be observed at high contrast.
4) Thin film structures can be directly measured on the order of nanometers.
(2) Enhanced elemental analysis capability
1) High sensitivity elemental analysis from small nanometer regions of interest is possible.
2) The HD-2000 and an X-ray analyzer can be integrated and operated using a single keyboard/mouse control.
(3) High speed image handling
1) The HD-2000 produces digital images which can be quickly processed, transmitted, filed, and printed. It
allows direct measurement of key parameters of samples and necessary comments can be input on images.
(4) High speed sample preparation
1) Sample holders of the HD-2000 are compatible with FIB (focused ion beam system) for quick and accurate
sample preparation.
2) The targeted area of samples can be monitored using the secondary electron image of the HD-2000 for
precise milling on the FIB.
3) High resolution observation and elemental analysis of delicate samples such as compound and fragile materials
can be done quickly and easily with minimum operator training and experience.
Specifications
Sample size:
4 mm x 0.5 mm x 0.6 mm (or 3 mm dia.)
Resolution:
0.4 nm Accelerating voltage: 200 kV
Magnification:
X100 - X2,000,000
Size of main unit:
105 cm(W) x 142 cm(D) x 190 cm(H) |
