Winbond Electronics' First DRAM Plant Starts Operations June 23, 1998 (TAIPEI) -- Winbond Electronics Corp.'s first DRAM manufacturing plant, established as a joint investment between Winbond and Japan's Toshiba Corp., started operations June 18. The plant is expected to begin volume production of 64Mb DRAM chips in July, and total output in the second half of the year is estimated at 58,000 units.
Approximately 85 percent the production will supply the needs of Toshiba, while 15 percent will be sold under Winbond's name.
Winbond general manager Yang Ting-yuan pointed out that the production technology of the new plant spans four to five generations, from 0.35 to 0.2 micrometers.
The advanced technology will increase investment returns and achieve greater production efficiency, said Yang.
Fully engaged in the production of SRAM chips, flash memory chips, logic ICs and DRAM chips, Winbond expects DRAM chips to account for 50 percent of its total output in 2000, with non-DRAM products accounting for 25-30 percent.
The company also will seek OEM services from Vanguard International Semiconductor Corp. and Singapore's Chartered Semiconductor in an effort to minimize risks amid the current slump in the semiconductor market.
(Commercial Times, Taiwan) |
