Formerly About Advanced Micro Devices Message Board

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Politics : Formerly About Advanced Micro Devices

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next

To: Maxwell who wrote (35258)	7/30/1998 11:20:00 PM
From: Yousef	of 1573430

Maxwell, Re: "2) Etch Step: Etch is a complicated in-situ process a) You first etch the SiO2. This etch process must have good selectivity to exposed R1. In this step, you only etch the contact and the trench are masked by exposed R1. This is a time etch process. b) When the time is finished you then in-situ change the gas to etch the exposed R1. This must also have good selectivity to SiO2 or to whatever dielectric you use. This can be an end-point process. Once the end point is finished then you change your gas back to etch your SiO2 in the trenches and contacts. By the time you finish the trenches and contacts have been formed to your desire." I will say this etch is "complicated", Maxwell ... but ... you left out another important requirement for the etch. That is when you go to step (b) and are etching the bottom resist (R1) then somehow, this etch must not be removing any of the top resist (R2). This seems impossible. Also these two "magical" resists, are they both exposed at 248nm wavelength ?? Your "mythical" damascene process is falling apart, Maxwell ... as they say, "The devil is in the details". Make It So, Yousef

Report TOU Violation

Share This Post

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next