SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Politics : Formerly About Advanced Micro Devices
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  
To: Maxwell who wrote (39832)10/21/1998 10:29:00 PM
From: Yousef  Read Replies (1) of 1579241
 
Maxwell,

Re: "The higher the Idsat the higher the Idoff."

This isn't true in well designed FET's ... or ... You don't understand
(.25um -> .18um) devices. On a properly designed device, Idsat and Ioff
aren't directly related. What really affects Ioff is changes in Vthreshold
(Vt). What affects Idsat is primarily Leff and Vt. What you are seeing
Maxwell, is Vt "rolloff" as gate length is reduced. As you reduce gate length
on a poorly designed device, the Vt will be reduced and Ioff will increase
and Idsat will also increase. On a properly designed device, Vt will stay
fixed (within a few mV) as gate length is reduced and Idsat will increase
and Ioff will stay relatively constant. I hope you can understand the
above technical info.

Re: "The higher the Idsat the faster you can make the chip runs (higher MHz)."

Better tell this to your "half-wit" relative, Ali ... He still believes
it's the "architecture thing". <ggg>

Make It So,
Yousef

Report TOU ViolationShare This Post
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  

HomeMailHotSubjectMarksPeopleMarksKeepersSettings
Terms Of UseContact UsCopyright/IP PolicyPrivacy PolicyAbout UsFAQAdvertise on SI
© 2025 Knight Sac Media.  Data provided by Twelve Data, Alpha Vantage, and CityFALCON News