I was just reading this article in EE News about NEC's taking a leadership role in DRAM and how they've just brought out a 256K chip. So, naturally being a keen ESI fan I wanted to know when they last purchased a product and it was in a 10/30 press release (see details below). Glad to see ESI is enabling bleeding edge technology.
There's a trade show in Japan next month. Think it will produce any interesting stories? ESI will have all their products on display.
Regards, Mark
From the Semiconductor pages of Electronic News: December 14, 1998 Issue
NEC's Next-Gen Memory Line-Up
Santa Clara--NEC Electronics is positioning itself to become a leader in a variety of dynamic RAM (DRAM) memories for the next generation of personal computers, servers and workstations.
The Japanese company already has under development double data rate (DDR) DRAM modules, direct Rambus DRAM (D-RDRAM) modules, and its own proprietary high performance next generation memory virtual channel memory (VCM) DRAM. Now, the company has rolled out a 256-megabit SDRAM that it claims can hold more than four times the data than current market standard 64-megabit DRAM.
NEC is targeting the 256M SDRAM at workstation and server applications where the work intensive applications are heavy. The SDRAM is said to eliminate the need to stack devices or have dual motherboard offerings that have been required to get the same density in today's computers. The 256M part is able to do this by using standard 168-pin DIMM modules with 512MB (18 chips per module) of capacity.
NEC's VCM DRAM is said to be able to compete for the sub-$1,000 sockets of the PC market by driving down the cost of manufacturing while enabling a high performance. DDR SDRAM is being targeted at workstations, servers and mainstream PCs. D-RDRAM is, of course, slated to be the next generation used in most mainstream PCs with its high bandwidth and high performance capabilities.
The 256M SDRAM is fabricated in a 0.20-micron process and offers a CAS latency of 3 at a clock frequency of 133MHz and a latency of 2 at 100MHz. This gives it a good shot at becoming an alternative for the workstation and server markets due to this low latency, NEC is hoping.
NEC is sampling the 256M SDRAMs with mass production slated to begin in April of 1999 priced at $250 in 100,000-unit quantities. The SDRAM is pin compatible with NEC's 64M and 128M DRAM devices and includes a single address pin to provide users with interchangeability for a 2 to 4 factor increase in memory capacity.
Having a variety of options as new memory technologies become in demand will allow NEC to have a stake in whatever memory becomes the most popular or ends up being the best for each individual market. As with most Japanese companies, NEC is not throwing all of its future memory revenues in one DRAM basket but looking more to multiple memories that can be used for cross platform applications.
In other high performance DRAM news, Philips Semiconductors will today introduce three DDR SDRAM support chips designed to help memory makers to reach the performance that is being required by PC OEMs and higher speed core microprocessors.
Philips said it also working on memory support circuits for both VCM and D-RDRAM modules as well in the near future and already offers DIMM vendors memory interfaces for PC-100 and PC-133 SDRAMs. The first DDR circuits are expect to begin shipping in late 1Q99.
From the ESI website
ESI Announces a $3.7 Million Order from Hua Hong NEC Electronics for Memory Yield Improvement Systems
News Release Menu
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Portland, Oregon (October 30, 1998) -- Electro Scientific Industries, Inc. (NASDAQ: ESIO) today announced a $3.7 million order from Hua Hong NEC Electronics Company Ltd. of Shanghai for ESI's Model 9275 Memory Yield Improvement Systems. Hua Hong NEC is a joint venture between Hua Hong Electronics of Shanghai, China and NEC Electronics of Tokyo, Japan.
The systems will be shipped over the next twelve months to HH NEC's new facility in Shanghai, China, with the first two units shipping in November. The 9275's will be used by HH NEC to produce 64mb DRAM products. This order demonstrates the value of the 9275 system in production of advanced generation poly-silicon link structures in memory products.
"HH NEC's selection of ESI to supply memory yield improvement systems continues NEC's long standing relationship with ESI around the world," said Takeyama Hirohiko, Purchasing Department Planning Manager for NEC. "In establishing the new Shanghai fab we sought out the best-in-class production tools for current and future production needs and, over the years ESI has demonstrated the ability to offer both the most productive and innovative solutions for memory repair."
ESI's Model 9275 specifically addresses the need to increase yields on 200mm wafers. It provides the smallest spot size and positioning accuracy available to repair increasingly smaller memory devices and a laser pulse rate up to 15% faster than previous models.
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About ESI
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ESI, headquartered in Portland, Oregon, designs and manufactures sophisticated products used around the world in electronics manufacturing including: laser manufacturing systems for semiconductor yield improvement; production and test equipment for the manufacture of surface mount ceramic capacitors; laser trim systems for precise electrical tuning of circuits; precision laser and mechanical drilling systems for electronic interconnect; and machine vision systems. Electro Scientific Industries is traded on the NASDAQ National Market System under the symbol, "ESIO." ESI's web site is esi.com.
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For more information, contact:
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Kimberly McAlear
Director of Corporate Communications
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