Frank & all, found reference to a couple of papers that Near M. Margalit, of NAC has published, wonder if some of the others from the Univ. of California/Santa Barbara are also working for NAC...
spie.org
Heterogeneous Integration: Systems on a Chip
Paper #: CR70-03
Fusion bonding: hetero-interfacial materials analysis and device
application, pp.30-55
Author(s): K.A. Black, Univ. of California/Santa Barbara,
Santa Barbara, CA, USA;
Aaron R. Hawkins, Univ. of California/Santa Barbara,
Santa Barbara, CA, USA;
Near M. Margalit, Univ. of California/Santa Barbara,
Santa Barbara, CA, USA;
Dubravko I. Babic,
Univ. of California/Santa Barbara, Santa Barbara,
CA, USA;
A.L. Holmes, Jr., Univ. of California/Santa Barbara,
Santa Barbara, CA, USA;
Ying-Lan Chang, Univ. of California/Santa Barbara,
Santa Barbara, CA, USA;
P.Abraham, Univ. of California/Santa Barbara,
Blacksburg, VA, USA;
John E. Bowers, Univ. of California/Santa Barbara,
Santa Barbara, CA, USA;
Evelyn L. Hu, Univ. of California/Santa Barbara,
Santa Barbara, CA, USA.
Abstract: A large number of novel devices have been recently
demonstrated using wafer fusion to integrate materials
with different lattice constants. In many case, devices
created using this technique have shown dramatic
improvements over those which maintain a single lattice
constant. We present device results and
characterizations of the fused interface between
several groups of materials. !56
Vertical-Cavity Surface-Emitting Lasers II
Paper #: 3286-03
Ultralow-threshold 850-nm oxide-apertured vertical-cavity lasers
using AlInGaAs/AlGaAs strained active layers, pp.18-29
Author(s): Jack Ko, Univ. of California/Santa Barbara, Goleta,
CA, USA;
Eric R. Hegblom, Univ. of California/Santa Barbara,
Goleta, CA, USA;
Yuliya A. Akulova,
Univ. of California/Santa Barbara, Santa Barbara,
CA, USA;
Near M. Margalit, Univ. of California/Santa Barbara,
Santa Barbara, CA, USA;
Larry A. Coldren, Univ. of California/Santa Barbara,
Santa Barbara, CA, USA.
Abstract: Recently 850-nm wavelength has been established as the
standard for local area interconnects and data-link
modules using GaAs/AlGaAs vertical cavity lasers (VCLs)
have become commercially available. However, the lowest
threshold current (I$-th$/) up-to-date has been
obtained from 980-nm VCLs using strained InGaAs quantum
wells. In this presentation we report an ultralow CW,
room temperature I$- th$/ of 156 $mu@A from a 2.8 $mu@m
diameter VCL with three AlInGaAs quantum wells in the
active region. The AlInGaAs/AlGaAs quantum well active
region is used to achieve laser emission near 850 nm
while maintaining the benefits of strain in lasers.
Previous studies have shown that strained
AlInGaAs/AlGaAs in-plane lasers exhibit the same
suppression to the propagation of dark-line defects as
strained InGaAs lasers. Here we have performed a
preliminary burn-in study on our devices to study the
reliability in AlInGaAs. AlGaAs VCLs for the first
time. We found that devices showed no degradation in
either output power or threshold current after 30 hours
of on-wafer testing at a constant current density of 22
kA/cm$+2$/ and junction temperature of 140 degrees C.
We also measured devices at various stage temperatures
and found that the lowest I$- th$/, 110 $mu@A for the
2.8 $mu@m diameter VCL, occurs near 230 Kelvin, where
the quantum well gain peak and the cavity mode are
aligned. In addition, we examined the behavior of the
external differential efficiency as a function of
device size and found that due to a thicker oxide
aperture than intended, optical scattering losses start
to dominate for devices smaller than 4 $mu@m diameter.
!20
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