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Technology Stocks : George Gilder - Forbes ASAP
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To: George Gilder who wrote (898)2/11/1999 12:28:00 PM
From: Robert Sheldon  Read Replies (1) of 5853
 
Mr. Gilder -

I have been reading bits about silicon carbide (SiC) as an alternative to gallium arsenide (GaAs) for applications beginning at 1.8 gigahertz, such as PCS base station networks.

Apparently SiC transistors are superior to current silicon and GaAs based devices due to greater output power per transistor. This higher output power is expected to allow a reduction in the use of transistors per base station resulting in less complex circuitry and lower cost. In addition, SiC's ability to dissipate heat more rapidly than other materials reportedly reduces the need for costly cooling equipment.

Would you classify this development as radical, disruptive, or merely crap?

Thank you for your reply in advance.
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