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Politics : Formerly About Advanced Micro Devices
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To: Jim McMannis who wrote (50958)2/25/1999 1:19:00 PM
From: RDM  Read Replies (2) of 1572208
 
The heat problems are from high voltage and large die and high MHz.

Solutions for heat are die shrink.

High voltage is used for speed, but results in more heat. High temperature cause slow speed. Thus if heat is not removed it will diminish the benefits of the high voltage.

High voltage is only a problem if you use thin oxides. No one on this thread had mentioned the thin gate oxide thickness of Intels 2 volt process. It is in the range of 50-150 angstroms. AMD probably has a thicker thin gate oxide which would be able to handle higher "jacked-up" voltages. Process guys consider the oxide thickness a prized secret. It is really the ratio of voltage to thin oxide thickness, or electic field strength (volts/angstrom), that must not be exceeded. The maximum field strength that may be tolerated is reduced by cycling the electric field, thus the maximum field must be reduced at high Mhz. Without specific knowledge of the thin gate oxide thickness it is not possible to to know whether INTEL at 2 volts or AMD at 2.4 volts is stressing the oxide more.

The introduction of large L2 cache may create yield problems due to large die size. The new K6-III feature of a larger and variable size L3 cache opens up possibilities of design/system/support chip problems. The chip heat problem is due to high voltage, high Mhz and large die size. Shrinking to .18 micron may fix by reducing die size.
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