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Politics : Formerly About Advanced Micro Devices

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To: Yousef who wrote (50978)2/26/1999 12:50:00 AM
From: Paul Engel  Read Replies (2) of 1572298
 
Yousef - Re: "Hot Carrier Injection (HCI) results. What happens with HCI is that electrons from Source are "trapped" at the gate oxide/silicon interface due to the higher E-field caused by the "jacked up" voltage on the gate. These "trapped" electrons cause the Vt of the FET to increase which decreases the Idsat of the FET."

AMD knows all about this !

They shipped IBM some "jacked-up" 80C286's about 10 or 12 years ago - they lasted a few days on system tests at IBM before failing for Hot Electron Trapping.

Seems that AMD never thought to test for this prior to shipping those turkeys.

As I recall, AMD was not using LDD (Lightly doped drains) at that time and the high drain fields were the cause of the problem.

Paul
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