SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Politics : Formerly About Advanced Micro Devices
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  
To: RDM who wrote (51059)2/26/1999 9:10:00 PM
From: Yousef  Read Replies (1) of 1572085
 
RDM,

Re: "I appreciate you guidance ... you stated the optical thickness of the
oxide layer but not the insulator thickness of the finished device."

RDM, the final gate oxide thickness doesn't change from the grown thickness.
Polysilicon is deposited right after the gate oxide anneal step and thus
there is no opportunity for the gate thickness to change. Some people
quote "electrical" gate oxide thickness ... For the .25um process, the
"electrical" thickness is typically 42A, but the physical thickness
is about 32A.

Make It So,
Yousef
Report TOU ViolationShare This Post
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  

HomeMailHotSubjectMarksPeopleMarksKeepersSettings
Terms Of UseContact UsCopyright/IP PolicyPrivacy PolicyAbout UsFAQAdvertise on SI
© 2025 Knight Sac Media.  Data provided by Twelve Data, Alpha Vantage, and CityFALCON News