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Politics : Formerly About Advanced Micro Devices
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To: RDM who wrote (51155)2/26/1999 9:21:00 PM
From: Yousef   of 1576237
 
RDM,

Re: "I understood that there was a silicon nitride or other secret dielectric
layer on top to the 42A electrical thickness layer."

No RDM, there is not a silicon nitride layer ... After gate oxide growth,
the oxide is annealed in a Rapid Thermal Processor in a nitrogen environment
that allows nitrogen to become incorporated in the oxide and reduce any
fixed charges. Maybe this is what you are referring to ... However, this
anneal doesn't change the gate thickness appreciably.

Hope this helps.

Make It So,
Yousef
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