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Politics : Formerly About Advanced Micro Devices
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To: RDM who wrote (51140)2/27/1999 3:06:00 AM
From: Paul Engel  Read Replies (2) of 1571935
 
RDM - Re: "I believe that both Elmer and Yousef are making some kind of estimate without direct data. They a relying on a hunch"

Here's the real data.

Intel's 0.25 micron process uses a 40.8 Angstrom Thermally grown Silicon Dioxide gate thickness.

This process uses a Vcc from 1.6 volts up to 2 volts MAX.

Source: 1998 IEEE Soilds State Circuits Conference

AMD's 0.25 micron process uses a 35 Angstrom Thermally grown Silicon Dioxide Gate thickness - 12% THINNER than Intel's.

Source - 1999 IEEE Soild State Circuits Conference.

AMD is using a JACKED-UP 2.4 VOLTS Vcc across these gates, 20% HIGHER than the maximum Intel Vcc.

The net result is that the Electric Field across the AMD gates is 37% HIGHER than for the Intel Gates : (2.4/35)/(2.0/40) = 1.37

Paul
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