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Technology Stocks : Intel Corporation (INTC)

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Nov 28 12:59 PM EST

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To: greenspirit who wrote (75462)	3/5/1999 2:27:00 AM
From: Paul Engel	Read Replies (1) of 186894

Michael -Re: "a tensile stress of the gapfill layer balances the compressive stress of the seed layer and the third dielectric layer, thereby producing an overall compressive stress between 0.5e9 and 1.5e9 dyne per square centimeter as result of the layers. " Slightly compressive film stresses are desirable because TENSILE stersses in films generally lead to cracking, crazing and delamination. Achieving a "compressive" stress seems to be the objective of this process. Re: ". It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched. " Sputter etching - generally the "REVERSE" of sputter deposition -is usually done in a sputter machine, which is a PVD - Physical Vapor Deposition - process. CVD - Chemical Vapor Deposition - is quite a bit different, performed by reacting several gases together to make a third compound which deposits onto the substrate - a wafer in this case. This implies the second step is done in a CVD chamber and then the substrates are removed and placed in PVD chamber for sputter etching. Paul

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