Toshiba extends DRAM pact with Winbond to 0.18- and 0.15-micron processes
A service of Semiconductor Business News, CMP Media Inc.
Story posted 9 a.m. EST/6 a.m., PST, 3/16/99
TOKYO--Toshiba Corp. here today announced a DRAM
manufacturing agreement with Taiwan's Winbond Electronics Corp.,
which will produce advanced memories with Toshiba's 0.18- and
0.15-micron CMOS process technologies. In addition, Toshiba can
use Winbond as a foundry for these DRAM products.
The agreement provides Winbond with processes for 64-, 128- and
256-megabit DRAMs, said Toshiba, which has licensed technology
to the Taiwan chip maker since December 1995.
As part of the new technology pact, Winbond engineers will be
trained in development, production and process technologies at
Toshiba's Advanced Microelectronics Center and Yokkaichi
facilities. Toshiba will also provide initial engineering support for
manufacturing at Winbond's new wafer fab in Taiwan, which will be
expended to produce 256-Mbit DRAM under the arrangement. |
