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Technology Stocks : Micron Only Forum
MU 263.78+4.5%3:59 PM EST
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To: unotooth who wrote (44506)3/28/1999 3:56:00 PM
From: Fabeyes  Read Replies (1) of 53903
 
In a full dual damascene process you use an ILD to form both the via and metal fill areas. Instead of using Alum for the fill you seed in a barrier layer and then sputter on copper. Basically you get rid of WSIX for the contact via process.

But you are right on a Damascene process you would still use Tungsten for the first via. Remember the work done was on a Dual Damascene, so you would do away with tungsten altogether. Just start out with a via and metal fill cut into the ILD then go from there for first metal.
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