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Technology Stocks : Kopin Corp. (KOPN)
KOPN 2.555-0.2%10:05 AM EST

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To: kinkblot who wrote (585)3/29/1999 10:29:00 AM
From: kinkblot  Read Replies (1) of 1820
 
Philips Semiconductors' new QUBiC3 process technology...

www-eu.semiconductors.philips.com

...sets the benchmark for the world's fastest silicon BiCMOS with an fmax of 70GHz.

A key factor in achieving the excellent RF performance of the QUBiC3 technology is an interconnect system utilising a special dielectric material, HSQ (hydrogen silsesquioxane), that has a particularly low dielectric constant of 3.0. This is used as the insulating material between the metal layers and gives approximately 45 percent less capacitance than traditional insulating materials with dielectric constants of about 4.0. The result is a reduced parasitic capacitance that improves high frequency performance. This unique feature, combined with QUBiC3's ability to achieve high-speed switching and extremely low noise figures of only 0.6 dB, means that QUBiC3 is the ideal process technology to make ICs for low-noise amplifier (LNA) designs and mobile telecommunications applications.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Much of the performance improvement derives from the lower dielectric constant of the insulating layers. Texas Instruments is already using an HSQ spin-on glass (from Dow Corning) as a low-k dielectric replacement for SiO2 in some devices. This material is not as thermally stable as silicon dioxide, however.

Earlier Philips release on 'Double Poly' technology:
www-eu.semiconductors.philips.com
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