Toshiba to slash 64-Mbit DRAM production, accelerate 0.20 micron processing
A service of Semiconductor Business News, CMP Media Inc.
Story posted 9 a.m. EST/6 a.m., PST, 4/1/99
IRVINE, Calif -- Toshiba Corp. plans to drastically cut production of 64-megabit DRAMs by the end of this year, shifting the majority of its DRAM output to 128-Mb SDRAM and other high-performance memory.
According to Toshiba America Electronic Components Inc. (TEAC) in Irvine, the company's latest plans call for reducing 64-Mbit DRAM production by 90%, down to 1 million chips per month by December. In response to market demand, Toshiba will speed up the output of 128-Mbit, 133-MHz SDRAM, Double Data Rate SDRAM, and 800-MHz RDRAM.
The company said it will be able to meet the high capacity for these high-performance products by moving quickly to 0.20-micron process geometries. By June, Toshiba's Yokkaichi Works will be processing all of its wafers at 0.20 micron. By August, Dominion Semiconductor in Manassas, Va., its joint venture with IBM Corp., will also be processing 0.20 micron, and the majority of Toshiba's dedicated production at Winbond Semiconductor, in Taiwan, will also be at 0.20 micron.
"Upgrading all of our DRAM production to the 0.20-micron geometry by the end of the third quarter, and focusing on 128-Mbit-based memory solutions for servers, workstations, high-end PCs and notebook PCs, enables us to provide the greatest added value to our customers," said Jamie Stitt, DRAM business development manager at TAEC. Toshiba was the first manufacturer to produce 128-Mb SDRAM at a 0.20-micron process geometry, he said, and is one of the few chip makers shipping 128-Mbit devices in volume.
Further plans call for the transfer of Yokkaichi's 0.175-micron pilot line technology to mass production lines beginning in the fourth quarter of 1999.
"Initially, our emphasis will be on 100 and 133-MHz SDRAM, and will include RDRAM and DDR SDRAM as demand grows," Stitt continued. "Whether the industry demand is for 133-MHz SDRAM, 800-MHz 128/144-Mbit RDRAM, or 266-MHz DDR SDRAM, Toshiba will be able to respond within the normal production cycle-time."
Toshiba is essentially covering its bets, noted Jim Handy, principal analyst at Dataquest, San Jose. "DRAM manufacturers are saddled today with difficult choices, mainly requiring them to enhance processes and change interfaces at an accelerating rate, at a time when investment capital is difficult to obtain."
Toshiba will be able to produce any of the products in response to specific market demand at any of its DRAM facilities, lowering costs and increasing efficiency, he added.
At the same time, Toshiba has begun sampling new family of high-performance 128-Mbit DDR SDRAMs manufactured with the 0.20 micron design rules.
"These devices are the next step up from 133-MHz SDRAM to achieve greater performance and bandwidth," said Stitt. "We can easily adjust the production mix of our high speed DRAM among DDR, RDRAM. or 133-MHz SDRAM to meet the needs of our customers." |
