SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Energy Conversion Devices

 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  
To: Ray who wrote (3518)4/7/1999 3:48:00 PM
From: fred whitridge  Read Replies (1) of 8393
 
Ray: nice post and excellent article. Hope you aren't ripping those pages out for other purposes after you read them.

Some quibbles:
"24 to 26 masks w/ 5 metal layers" from OUM.pdf

"Adds 2-4 steps to conventional CMOS" ibid

"programming [aka write?] pulse width at 50 nsec" ibid, slide 14
now down to 30nsec per an email to me from Tyler

"Reads at 10-20% faster than DRAM" e-mail from Tyler
versus
"[tmj-RAM] demonstrates reading and writing time of 10nsec, about 6x faster than todays DRAMS"-- nyTimes of yesterday

No offense but I think we really need to hear from Tyler. I too, am excited to see the OUM.pdf in slide format which is encouraging about the prospect of someone biting on this bait. Here's what I think I know:

1) we are closer to production by a long way
2) size: we put a lot more information in the same real estate, but they sound like they may get smaller eventually.
3) speed: we are slower than tmj-RAM but lots faster than existing FLASH and a bit faster than conventional RAM.
4) cost: who knows?
5) other applicability: Tyler mentioned power applications and low resistance. We have other uses.
6) We need a big partner.
7) This is gonna be big for ECD....
Report TOU ViolationShare This Post
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext