Here is the latest news on EDO DRAM you may like to read:
EDO DRAM busts burst memory's speed advantage
By Ron Wilson
SAN JOSE, Calif. -- The unprecedented speed of the latest extended-data-out (EDO) DRAMs, coupled with market skepticism, may have sealed the fate of the burst EDO DRAM. Mosel Vitelic is coming out with an EDO DRAM with a 15-ns cycle time, challenging the highest speeds quoted for burst EDO devices. What's more, EE Times has learned, the primary proponent of burst EDO, Micron Semiconductor Inc. (Boise, Idaho), has quietly ceased to promote burst EDO chips for new designs.
The Mosel part illustrates how quickly specialty-DRAM houses have been able to increase the speed of conventional EDO chips. The 1M-by-4 device has a 15-ns EDO cycle and a 40-ns RAS access time. This means
that--at least in carefully laid out local memory applications such as frame buffers--the chips can produce short bursts of data at a 66-MHz rate. This rivals the speed of currently shipping synchronous DRAMs, which are moving from early 60-MHz parts to a goal of 80 MHz in this generation.
Another area in which the new devices will give SDRAMs a run for their money is cost. Mosel is pricing the 15-ns EDO DRAMs at parity with fast-page-mode 1M-by-4 DRAMs, undercutting the premium that many
DRAM vendors are still charging for SDRAMs. |
