To: Jess Beltz who wrote (22226 ) 6/11/1999 3:24:00 PM From: BillyG Respond to of 25960
Sematech litho panel reaffirms 4X magnification standard for scanners A service of Semiconductor Business News, CMP Media Inc. Story posted 12:45 p.m. EST/9:45 a.m., PST, 6/11/99 By Jack Robertson CHICAGO -- An International Sematech task force reviewing lithography technology has voted to reaffirm 4X as the magnification standard for step-and-scan tools. During a meeting here this week, the panel considered proposals by some foreign chip makers pushing for a 5X standard and even one proposing 6X magnification for scanner exposure tools, according to a source in the meeting. The advocates of higher magnification standards have expressed concerns that photomask makers will not be able to produce 4X reticles at high enough throughput to meet chip maker needs. They argued that the finer details in writing 4X masks slows down the process. International Sematech's critical review of new optical lithography systems predicts that 193-nm and 157-nm wavelength deep-ultraviolet tools will extend to 0.10-micron feature size and perhaps even to 0.07 micron. The review of non-optical Next Generation Lithography continued to endorse both the competing Extreme Ultraviolet (EUV) and Electron Projection Lithography (EPL) systems. An Intel Corp.-backed consortium reported progress on EUV development. Two EPL presentations were made by a team of Lucent Technologies, Applied Materials and ASM Lithography which are behind on Lucent's Scalpel, and a rival electron-beam projection development by Nikon Corp. International Sematech had endorsed EUV and EPL at a workshop last December in Colorado Springs, Colo., as preferred candidates for the Next Generation Lithography (see Dec. 17, 1998, story). However, IBM Corp. continues to push x-ray lithography and a European group led by Infineon Technologies AG is still developing an ion beam projection approach.