SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Lam Research (LRCX, NASDAQ): To the Insiders -- Ignore unavailable to you. Want to Upgrade?


To: Proud_Infidel who wrote (2937)6/16/1999 9:23:00 PM
From: Jong Hyun Yoo  Read Replies (1) | Respond to of 5867
 
From recent talk with some engineers from LAM as well as AMAT,
I was able to find our that TEL is having some problems in the
oxide etch area with respect to emerging 265Mbit DRAM. Most of
Korean and Taiwan companies are going with 0.18 and 0.13 micron
technology for 256 Mbit DRAM. Source tells me that etch rate of
TEL for these fine line width process is too low, thereby greatly
lowering the system throughput. I believe that door to obtaining
a greater market share in oxide etch for emerging memory and logic application is wide open for LAM. LAM is targeting EXELAN dielectric
system for these new emerging application and can win back the market share it had lost to TEL. In addition, as I understand,
9100PTX offers a highest oxide etch rate exceeding 10,000 um per min.
9100PTX does have some issues to be resolved but LAM is currently
improving the system for more demanding process.