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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Elmer who wrote (62259)	6/18/1999 1:05:00 AM
From: Process Boy	Respond to of 1575914

Elmer - RE: Ioff I will do a little bit of research to make sure I've got my facts straight, and then repost. I do know Ioff is a very important consideration, but me trying to explaining the physics of it is not optimum, off the top of my head, anyway. PB

To: Elmer who wrote (62259)	6/18/1999 2:03:00 PM
From: RDM	Read Replies (2) \| Respond to of 1575914

<Excessive standby power dissipation> infopad.eecs.berkeley.edu The magnitude of the subthreshold current is both a function of process, device sizing, and supply voltage [sze81]. The process parameter that predominantly affects the current value is V. Reducing V exponentially increases the subthreshold current. For the MOSIS process, V is 0.7V - 0.9V, and the current magnitude for a ranges from 500fA - 10pA, which is similar in magnitude to diode leakage current. For every transistor with diode leakage, the same bias conditions are present for subthreshold leakage, such that the total power dissipation of the two are roughly the same magnitude. The subthreshold current is also proportional to the transistor device size (W/L), and an exponential function of the supply voltage. Thus, the current can be minimized by reducing the transistor sizes, and by reducing the supply voltage.