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Technology Stocks : Rambus (RMBS) - Eagle or Penguin -- Ignore unavailable to you. Want to Upgrade?

To: MileHigh who wrote (23784)	6/28/1999 10:24:00 AM
From: GVTucker	Read Replies (4) \| Respond to of 93625

MileHigh, RE: Also, the Dell news is out I have asked this before in a different context, and will ask it directly this time. Why was there no press release from either DELL or RMBS? I agree that it is a big deal, particularly for RMBS. Why wouldn't they want to toot their own horn a little?

To: MileHigh who wrote (23784)	6/28/1999 10:56:00 AM
From: Tony Viola	Read Replies (2) \| Respond to of 93625

Milehigh, I wonder what this Samsung 1 Gb DDR SDRAM means to the state of the art DRAM landscape and Rambus? 1 Gb, fast data rate, state of the art 0.13-micron design rules. I used to think I could keep up with all the latest news in computer memory. Now, the news seems to have become a random noise generator. I'm going to post this on Intel to see if folks there might see where it fits. Maybe it's slow re latency, or will not be configured in addressesXbits to fit into regular desktops? semibiznews.com Daily news for semiconductor industry managers Samsung plans to start shipping 1-Gbit DRAMs this year A service of Semiconductor Business News, CMP Media Inc. Story 9 a.m. EST/6 a.m., PST, 6/28/99 AUSTIN, Tex.--At press conference here for Korean journalists, Samsung Electronics Co. Ltd. today announced it has developed a 1-gigabit Double Data Rate synchronous DRAM, which operates at 350 HMz. The 1-Gbit DDR SDRAM was developed with 0.13-micron design rules, said Samsung, which claimed to be the first chip maker to create such a device. Samsung officials maintained that the 1-Gbit memory is 30-40% smaller than similar chips developed by competitors. The memory operates at 1.8 volts. Samsung told the group of Korean journalists that it will be able to forgo expensive 300-mm wafers and argon-fluoride (ArF) 193-nm lithography systems in volume production of the 1-Gbit DRAM. The company plans to put the memory into volume production this year using existing krypton-fluoride (KrF) excimer lithography. "The development of the production-ready 1-Gbit DDR is significant in that we were successful in applying the 0.13-micron design rule to semiconductor production," said Chang-gyu Hwang, executive vice president at Samsung. "We are now able to secure competitiveness in the conventional semiconductor area, and will be in a competitive position in the 256-Mbit market as well. "We are planning to ship 1-Gbit DDR SDRAM samples to our customers by year's end," he added.