Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Petz who wrote (63645)	6/28/1999 8:17:00 PM
From: fyo	Respond to of 1586030

Thread. Since this crops up from time to time (hmm)... Apperantly, Samsung will sample 350MHz DDRDRAMs manufactured on a .13mu process to their customers by the end of this year. 350MHz memory clock, 700MHz data: Higher bandwidth and lower latency than 800MHz DRDRAMs. Of course, the bandwidth issue is somewhat muddled since the DRDRAMs have a separate channel for the 'overhead' (and thus have an effective bandwidth much closer to the peak bandwidth, compared to the various SDRAM schemes). ---------------- Samsung to start shipping 1-Gbit DRAMs samples this year By News Staff semibiznews.com 06/28/99, 01:56:49 PM EDT Samsung Electronics Co. Ltd. today announced it has developed a 1-gigabit Double Data Rate synchronous DRAM, which operates at 350 MHz. The 1-Gbit DDR SDRAM was developed with 0.13-micron design rules, said Samsung, which claimed to be the first chip maker to create such a device. Samsung officials said that the 1-Gbit memory is 30-40% smaller than similar chips developed by competitors. The memory operates at 1.8 volts. Samsung said that it will be able to forgo expensive 300-mm wafers and argon-fluoride (ArF) 193-nm lithography systems in volume production of the 1-Gbit DRAM. The company plans to put the memory into volume production this year using existing krypton-fluoride (KrF) excimer lithography. "The development of the production-ready 1-Gbit DDR is significant in that we were successful in applying the 0.13-micron design rule to semiconductor production," said Chang-gyu Hwang, executive vice president at Samsung. "We are now able to secure competitiveness in the conventional semiconductor area, and will be in a competitive position in the 256-Mbit market as well. "We are planning to ship 1-Gbit DDR SDRAM samples to our customers by year's end," he added. ebnews.com

To: Petz who wrote (63645)	6/28/1999 9:14:00 PM
From: tejek	Respond to of 1586030

John RE: "Imagine how bad it would be for them if component prices start rising." Yes but I don't think that is the problem; rather the reverse: it appears demand is not there. Thus its beginning to look like most component prices are going down instead of up........it would help explain earnings warnings by all the disk drive makers. As for GTW the word has been that they are not going to make their quarter either but they have not preannounced as of yet. ted