Since the days of quartz and now zircon? It is the paste qualities of the plasma dust diamonf and supercondictivity of the layers that will be keyed into now. Tobad you haven't read some of the links I put over at Raging Bull, I think you better join. Education is power, and the days of the old school of thought will only keep one in the rear ofthe learning curve. The pigs are mentioned in your own PP, ie pig stocks...wish I could find some links quick...but he is a halfway attempt.
#1=
Your comment about CREE and their research has led to this June News Release:
cree.com
Cree Rresearch, Inc. Announces First SiC
Microwave Ppower Product
Cree Introduces 2 GHz MESFET Device
Durham, NC, June 14, 1999 - Cree Research, Inc., (Nasdaq: CREE), the world leader in the development and manufacture of semiconductor materials and electronic devices made from silicon carbide (SiC), announced today the introduction of the first in a planned family of RF power transistor products designed for wireless and broadcast applications. This device, the CRF-20010, targeted for the driver stage of wireless base station amplifiers, is a 48 volt, 10 watt high linearity transistor with 12 dB of gain at 2 gigahertz (GHz). The CRF-20010 has passed initial product reliability tests and the company anticipates delivery of samples over the next three months.
The product, based on Cree's proprietary 48 volt SiC MESFET technology, has performance advantages over conventional technologies. This 48 volt device eliminates the DC-to-DC converter required to utilize existing technologies such as silicon and gallium arsenide. The less complex circuitry results in increased reliability, reduced cost and increased efficiency.
Neal Hunter, chairman and chief executive officer stated, "This product release launches yet another significant device business segment for Cree. We continue to develop cutting-edge solutions in a cost effective manner, and are leveraging our materials technology expertise for devices capable of performance not previously available."
...>
Key points from the above NR:
..<<..leader in the development and manufacture of semiconductor materials and electronic devices made from silicon carbide (SiC), announced today ..//..&..volt device eliminates the DC-to-DC converter required to utilize existing technologies such as silicon and gallium arsenide. The less complex circuitry results in increased reliability, reduced cost and increased efficiency.
..//..
Now connect the dots to the NUKE- Rhombic NEWS RELEASE OF TODAY:
( THIS IS SIMPLY STRESSING THE POSITIVE ):
go2net.newsalert.com
..//..NUKE announces that the company has accepted a proposal from the University of Missouri to use its laboratory facilities, technical equipment, and personnel, to develop selected projects using the company's "Forced Diffusion" technology. Purification of silicon carbide and gallium nitride wafer materials will begin July 1, 1999 under the supervision of Dr. Mark Prelas. The wafers will be bought from U.S. manufacturers in two and three inch crystal sizes, and treated with the patented "Forced Diffusion" process. The University proposal is to use the Rhombic technology "to purify the gallium nitride of the unintentional oxygen and silicon impurities incorporated into the structure, and to purify the silicon carbide wafers of the pollutants boron, nitrogen and oxygen. The gallium nitride wafer is a blue laser generator, and silicon carbide is a major factor in high temperature, high speed electronics. ..//..
Nuke KEY points:
"Purification of silicon carbide and gallium nitride wafer materials"
and
"..bought from U.S. manufacturers in two and three inch crystal sizes, and treated with the patented "Forced Diffusion" process."
Now go up to CREE NR:
..//.."semiconductor materials and electronic devices made from silicon carbide (SiC), "...//...
SEE NOW that PHOTOVOLTAIC CELLS are a Electronic Device in a sub class of Semiconductors? Yes, i do. this is the key part.
It does not state a manufacting company semiconductor name as to who would ultimatly use and manufacture such a HIGH SPEED & LOW RESISTANCE in that they ( Rhombic did say in todays PR:
"..is a major factor in high temperature, high speed electronics. Both materials are light emitting diodes that can be modified .."
End of theorum. Q.E.D. ( today ) It is tomorrow...a long time in the scheme of things is but a blip on the timeline of this Eon/Age. I think this iS the importance today, a step in progress- a progression of events.
ChuckaItIsOnlyADemonstration.
#2=
search.go2net.com
See some of the 29 hits :
Metacrawler Seach - P Cells:
Results for "photovoltaic cells" 1 to 20 of 29 results
page: 1 - 2 next View by: Relevance | Site | Source
New: Email results to a friend
1000 ENERGY at NRDC: Photovoltaic Cells
Alternative energy technologies hold the key to curbing air pollution and global warming.
nrdc.org (Infoseek)
1000 Electricity Info
Electricity Info an Internet Sampler on Electricity created by Lisa Robles Miles Magnet Center The purpose of this Web page is to give you a sampling of some of the aspects of Electricity.The following links come from all over the World Wide Web.
kn.pacbell.com (WebCrawler)
1000 BTS - Photovoltaic Systems
Photovoltaic Systems Photovoltaic cells, or solar cells, convert sunlight directly into electricity. Photovoltaic systems use large panels comprised of many solar cells connected together to work in unison.
eren.doe.gov (Excite)
886 Components for Photovoltaic Systems
Components for Photovoltaic Systems In photovoltaic systems, the solar generator is combined with other components - inverters, batteries, charge controllers, energy management systems - depending on the application.
ise.fhg.de (Excite)
876 Direct solar energy - Activity 2
science.org.au (Infoseek)
869 Solar Energy
An immense amount of energy from the sun strikes the surface of the earth every day. This energy may be captured and used in the form of heat in "solar thermal" applications, or it may be converted directly into electricity to power electrical devices using photovoltaic cells.
solstice.crest.org (WebCrawler)
787 ENERGY at NRDC: Photovoltaic Cells
Alternative energy technologies hold the key to curbing air pollution and global warming.
mail.igc.apc.org (Excite)
758 ECN-report (1996): Photovoltaic cells. An overview
Title: Photovoltaic cells. An overview. Author: Wettling, W. ; Mertens, R.P. ; Sinke, W.C. ; Schock, H.W. ECN report number: ECN-RX--96-063 Number of pages: 14 p. Language: English ...
ecn.nl (Infoseek)
718 Jackson's Electronics Research Group
Center for Thin Film Devices Electronic Materials and Processing Research Laboratory Department of Electrical Engineering The Pennsylvania State University
jerg.ee.psu.edu (WebCrawler)
689 1000 Watt per square meter
The surface temperature has to be 25 degree Celsius in this Photovoltaic test. This test simulates full sunshine on the surface of planet earth.
pege.org (Excite)
627 FROM SUNSHINE TO ELECTRICAL CURRENT
Photovoltaic cells are able to turn the energy in solar radiation into electricity due to an energy transfer that occurs at the sub-atomic level. Solar energy comes in small packages called photons. These ...
hammock.ifas.ufl.edu (Infoseek)
581 Photovoltaics.com
We buy and sell photovoltaic cells. We buy pieces of solar cells and thin film cells. We sell pieces of solar cells and thin film cells. The pieces of solar cells are sorted, tested and categorized.
photovoltaics.com (Excite)
537 Renewable Energy Annual 1996
This report, the Renewable Energy Annual 1996,
eia.doe.gov (Infoseek)
533 Untitled
#3=
synopsys.com
and from page 7.html
<<..If new design methodologies and systematic reuse of building blocks are the science behind a system-on-a-chip, then advanced design tools are the rocket that will launch the system-on-a-chip era. This rocket science is fueled by synthesis combined with powerful new tools including: cycle-based simulation, emulation, formal verification, floorplanning, timing analysis, power optimization, test generation, transistor-level analysis, and Engineering Change Order control. This rocket fuel propels engineering teams to design the reusable building blocks, configure them into a system, verify that the entire system works as desired, produce system tests, and generate data for manufacturing.
Synthesis remains the basis for successful system-on-a-chip design. Behavioral- and register-transfer-level synthesis tools are key for designing large building blocks, not only for the initial implementation, but later for retargetting, resynthesis, and optimization of the blocks into new silicon technologies. Further, synthesis will aid in the orchestration of the building blocks into a system chip.
On to Next Page
..>>
and from page 10.html
<<..The RTL Synthesizable Subset is another key standard going forward. This will enable interoperability between tools at a higher level, and is a way to represent building blocks that can be shared consistently. This is a good example of a standard that enhances the design environment because it provides design descriptions that do not include specific tool and circuit implementations.
When combined with innovative technologies, these and other standards will pave the way for design success and the growth and efficiency of the system-on-a-chip market.
..>>
and ends at 15.html :
<<..There's a delicate balance between when it's too early to create a standard, and when it's too late. If a standard is developed too early, we run the risk of either stifling innovation or standardizing on the wrong thing. Furthermore, any time we standardize on a format prematurely, innovation suffers if the standard proves to be overly restrictive. Standards have to leave room for innovation.
On the other hand, if we create a standard that's too late, we end up wasting a lot of effort on something that has passed its useful life. Design methodology is always changing, so this is an ongoing concern. When it comes to knowing when to standardize, timing is everything.
Return to Cover Page
..>> Timing...building on the Original Silicon Blocks...that is what this ROCKFORD DEAL does...smart, very smart:
rhombic.com
We are at the start of a process that just may address these issues with the building block ON SILICON pasted on with a few new Rhombic inventions, just in my opinion.
Chucka
Dividend
Hey, David Sirk still likes NUKE- it is just a question on positioning!
Message 10203486
Message 10203486
#4=
Message 10171233
Message 10171233
Message 10171270
Message 10171270
Silicon - on - dust diamond ! SODD
Plant that TURF
Chucka
newsalert.com
#5=
Intel and Partners Links:
techstocks.com
Message 10184336
Message 10184336
Message 10189562
Message 10189562
Message 10185211
Message 10185211
<<..To: +Amy J (83770 )
From: +Paul Engel Friday, Jun 18 1999 3:31AM ET
Reply # of 84785
Amy - Re: "Do Silicon-on-Insulator structures exist today? If not, how frequent does a corruption occur from charge collection from electron-hole pairs? "
Actually, IBM claims they are within a few months of bringing SOI CPUs - PowerPCs - into production.
Many years ago, several companies were working on Silicon-On-Saphire (SOS) - an exotic technology that employed a very thin film of Epitaxial Silicon grown on a Sapphire substrate.
Inselek - a company in New Jersey - was in production at one point. HP and Intel also has SOS programs in development during the lates 70's and early 80's but technology problems scuttled these along with the inexorable march of Bulk Silicon CMOS technology.
Re: "how frequent does a corruption occur from charge collection from electron-hole pairs? "
Now that depends on many things - including WHERE THE SYSTEM is !
Most DRAM manufacturers and system manufacturers have this problem well under control - but they have had to go to EXTREME measures - such as using 3 dimensional TRENCH capacitors for the storage node = or MULTIPLE STACKED Polysilicon Storage gates - not to mention VERY VERY this gate oxides - all in the attempt to ADD capacitance to the storage node.
Q = CV, and raising the capacitance, C< increases the charge, Q, that is required to "flip" a bit. V is the voltage applied across the storage capacitor electrode/gate.
Now the kicker - in outer space, cosmic radiation that can penetrate essentially everything - has been shown to cause soft errors in memory chips and most likely will be one of the first "trip-points" for soft-error induced failures in logic devices such as microprocessors.
Paul
..>>
ChucaSOS-give me a sock-pair it with a layer pasted of Diamond Dust Plasma ona Silicon Chip, take two and see me in the morning! SOI IN OUTTER space...BTW ever hear of a Spacecraft called Progentor? It is thr unmaned one that HIT THE MIR....was used to save MIR and you see, it was the Luner Landing Module of the system, the power center. As the damaged MIR was shifting low towards earth...there was NO POWER SOURCE to lift it up, it got out of solar connect sun rays...only the Projenter could lift it back up to an ORBIT...bingo...MIR ordered NUKES' own NUCLID Battery to tesat it's almost unlimited source of backup power in space. Am I getting a point across? YET...NEYT!
P.P.S.-
Forced Diffusion Diamond Process
Rhombic Corporation holds Patent #5,597,762, covering the "Forced Diffusion"
diamond technology and which was issued January 28th, 1997. The United States
Patent Office received Rhombic's diamond patent application September 27th,
1994.
Rhombic Corporation's doped negative type (N-type) diamond technology, often
referred to as forced diffusion, has been successfully etched in a former
Soviet Republic laboratory to create two functional integrated circuits. This
breakthrough by Rhombic in successfully diffusing different elements into
diamond film produces a diamond with electronic properties greatly superior
to those of silicon, the material now used to make computer chips. This
proprietary technology is theoretically so powerful that a computer chip
operate hundreds of times faster than silicon. In addition, such N-type films
are considerably more resistant to heat and radiation than silicon, extending
indefinitely the life of electronic circuitry. This means not only ultra
fast integrated circuits and chips, but also diamond diodes and switches,
resulting in a complete revolution of today's computers.
This technology will have a broad impact on the existing diamond film market,
currently about $100 million and growing at a projected rate of 10 percent
per year. Applications range from computer and TV screens to diamond tools
and coatings for high-fidelity speakers. The total market for cutting tools
worldwide in 1991 was $250 million, of which $102 million was diamond
material. The projected sales of diamond electronics, currently about $6
million a year, is expected to reach $500 million by the year 2000. This
market is by far the most dynamic in the diamond film industry.
Rhombic Corporation has established ties with an International company, and
is working on an agreement to dope white mined diamond with boron to see if
the properties of the more economical white diamond can be modified to match
that of mined blue diamond. In addition, Rhombic is pursuing agreements with
other companies to develop applications based on material modification by the
addition of impurities. The market for boron-doped diamond film for the first
year is projected to be in excess of $30 million, with markets exploited by
Drunker, DeBeers of Europe, and Norton Diamond of the United States.
Nanophase diamond powders are a new material that was developed for the
Russian military program. It is a diamond powder made up of very small pieces
of diamond with a narrow distribution of sizes about four nanometers in
diameter. Rhombic is developing a process to press and bind the nanophase
diamond powder to form a hard material. The forced diffusion process can
change the mechanical properties of diamond grit by boron doping, making the
grit 10 to 15 percent harder than ordinary diamond grit. The market for
diamond grit is approximately $70 million a year.
With the release of the Patent "Field Enhanced Diffusion Using Optical
Activation", Rhombic Corporation is preparing to establish its first
manufacturing/laboratory site at Columbia, Missouri, to produce Positive (P)
type diamond film, and to finalize the development of Negative (N) type
diamond.
By diffusing certain elements into the diamond interstices, Rhombic has
already created a number of integrated N-type diamond circuits, and has
immediate plans to produce diamond diodes and switches. Diamond is unique
among all materials since it is both heat and radiation resistant, and is so
electrically conductive that diamond chip speed is potentially a thousand
times faster than silicon. Harder cutting tools and abrasives, diamond tv
screens and computer monitors, sensors, bearings and radar are among a number
of potential applications of doped diamond which Rhombic Corporation will be
developing.
Special Update: On April 14, 1999, Rhombic announced a six weeks feasability
study being produced by three major computer corporations on the applications
and economic viability of Rhombic's diamond technology.
The Nuclid Battery
The nuclid battery which is a more advanced version of the nuclear battery,
owned 100% by Rhombic Corporation, produces energy from the breakdown of
unstable isotopes of a number of basic elements such as Krypton, Strontium,
and Cesium. The battery's single purpose is to provide a generation or more
of constant energy for both manned and unmanned space flights to nearby
planets and eventually outer space.
Special Update - On April 9, 1999 a special report was released on the Nuclid
Battery which stated, "Recent planning among the Russian and German
co-inventors of the Rhombic Radio Nuclid Battery (Dust Plasma Battery)
includes information about extensive experiments by the Russian Academy of
Sciences with anticipated new runs on the MIR Space Station.
Members of the forthcoming International Space Laboratory, after docking its
third module, and scheduling astronauts for the year 2000, will provide a
priority experiment in space to be performed by the Rhombic Dust plasma
Battery.
The last experiments in the MIR space station were continued throughout
January 1999, and are still being evaluated at present. One of the first
experiments in the manned flight in early 2000 will be on dust plasmas. A
Russian team will cooperate in the experiment with a team from the Max Plank
Institute in Germany.
Dr. Heinrich Hora, representing Rhombic Corporation, recently initiated
contact with the International Computer and Communication Corporation (IC&C)
in Reston, Virginia, for promoting the Battery for use among the low orbiting
communication satellites to be launched in the near future for the fast
expanding cellular and internet business. Large-scale development and mass
production of the Battery may neccessitate the involvement of a large
satellite company or a consortium of them. Doctor Hora's contacts with
communication companies, in particular IC&C, may help Rhombic in these
developments.
Dr. Hora's latest report indicates that the much lighter weight and lesser
cost of Rhombic's Super Compact Battery may prove essential to reduce the
projected cost of the first 400 satellites into space. Former vice president
of the Russian Academy of Sciences, Dr. Vladimir Fortov, lately reported to
Dr. Hora that there has been "extensive progress" of work on the SRB with
dust plasmas.
Contacts will take place between the top producers of satellites at the IC&C
summit in Geneva, 13/14th of June, 1999. Among new members being sponsored is
the Russian Academy of Sciences. Rhombic Corporation soon will have the honor
of being considered as a member.
Diamond Flywheel Battery
In May 1999...another type.... |
