Ed, I just sent an email....I think we are in big trouble if Prelas actually answers it: LOL:
Thanks and best to all NUKES- Information is COMPLEX, minds are simple: Chucka-an EMail and a URL are a terrible thing to waste, I am still perplexed why Tom Swift never posted any URLs pertaining to HT Packaging- I FOUND NO REFERANCE...any WHERES!
>Date: Mon, 05 Jul 1999 10:31:30 -0400
>To: map@nxtmp.nuclear.missouri.edu
>From: Chuca Marsh <chucalo@aol.com>
>Subject: Every click is unavailable- I am IN CONTRACT to Rhombic for IR assistance, could some research be sent from Layman type understandable articles :
>Cc: "Rhombic Corp." <info@rhombic.com>
>
>Every click is unavailable- I am IN CONTRACT to Rhombic for IR assistance, could some research be sent from Layman type understandable articles :
>
>( Of YOUR choice)
>Thank You,
>Chucka Marshall
>
>The abstracts of these papers can be seen by clicking on the appropriate links.
>
> 1.Nucleation and selective deposition of diamond thin films, G. Popovici and M. A. Prelas, Physica Status Solidi (a)
> 132, 233 (1992).
>
> 2.Problems of n-type diamond doping ,G. Popovici and M. A. Prelas SPIE/ v. 2151 1994, Diamond-Film
> Semiconductors (1994) edited by M. Tamor and M. Aslam, p. 99
>
> 3.Diamond film doping , B. Spitsyn, G. Popovici, M. A. Prelas, presented at the 4th European Conference on Diamond,
> Diamond-like and Related Coatings., Portugal, 1993
>
> 4.Problems of diamond film doping , B. Spitsyn, G. Popovici, M. A. Prelas, Second International Conference on the
> Applications of Diamond Films and Related Materials, ed. M. Yoshikawa, M. Murakawa, Y. Tzeng and W. A.
> Yarbrough, August 25-27, 1993, Tokyo, Japan p. 57-64
>
> 5.Problems of n-type diamond film doping , G. Popovici, to be published in the Proceedings of the Second International
> Symposium on Diamond Films, Minsk, Belarus, May 1994
>
> 6.Laser Modes in Diamond , L.-T. S. Lin, M.A. Prelas, UMC; and G. Popovici, RDT, Wide Band-Gap Electronic
> Materials , Editors M. Prelas, P. Gielisse, G. Popovici, B. Spitsyn, and T. Stacy, Kluwer, p 187 (1995).
>
> 7.Problems of n-type diamond doping . Forced methods of doping, G. Popovici and M. A. Prelas, to be published in
> NATO Workshop Proceeding on Wide-band Gap Semiconductors, Minsk, Belarus, May 1994
>
> 8.Diffusion in diamond , Galina Popovici, T. Sung and M. A. Prelas, invited paper at International Conference on
> Diamond and Related Materials, Poland, June 1995
>
> 9.Diffusion of boron, hydrogen, oxygen, nitrogen and lithium in diamond. forced diffusion , Galina Popovici, T. Sung, M.
> A. Prelas, and S. Khasawinah, presented to the Meeting of Electrochemical Society, Reno, Nevada, May 1995
>
> 10.Photoluminescence of free standing hot-filament cvd diamond films, using He-Ne laser L.-T. S. Lin, Galina Popovici,
> M. A. Prelas, S. Khasawinah, T. Sung, presented to International Conference on Diamond and Related Materials,
> Poland, June 1995
>
> 11.Diffusion of impurities in single crystal diamond , Galina Popovici, T. Sung, M. A. Prelas and S. Khasawinah, presented
> to the Spring Meeting of MRS, April 1995
>
> 12.Residual stress and adhesion of the chemical vapor deposited diamond films on molybdenum and silicon substrates ,
> Galina Popovici, S. Khasawinah, T. Sung and M. A. Prelas, presented to the Spring Meeting of MRS, April 1995
>
> 13.Diffusion of impurities in polycrystalline diamond films , Galina Popovici, T. Sung, M. A. Prelas and S. Khasawinah,
> presented to the Spring Meeting of MRS, April 1995
>
> 14.Diffusion of boron and lithium in polycrystalline diamond films under DC bias , Galina Popovici, T. Sung, S. Khasawinah
> and M. A. Prelas, submited to Diamond and Related Materials
>
> 15.Diffusion of boron, hydrogen, oxygen and lithium in single crystalline and polycrystalline diamond. A novel method for
> the determination of the state of an impurity: forced diffusion of boron in ia type natural diamond , Galina Popovici, T.
> Sung, M. A. Prelas, R. G. Wilson, and S. Khasawinah, to be published in NATO Workshop Proceeding on
> Wide-band Gap Semiconductors, Minsk, Belarus, May 1994
>
> 16.Photovoltaic effects in metal/semiconductor barrier structures with boron doped polycrystalline diamond films ,
> V.I.Polyakov, P.I.Perov, N.M.Rossukanyi, A.I.Rukovishnikov, A.V.Khomich, M. A. Prelas, S. Khasawinah, T Sung,
> and Galina Popovici, submited to Thin Solid Films
>
> 17.Neutron irradiation and annealing of 10B doped chemical vapor deposited diamond films, S.A. Khasawinah, Galina
> Popovici, J. Farmer, T. Sung, M. A. Prelas, J. Chamberlain, and H. White , submited to J. Mater. Research
>
> 18.. Forced diffusion of boron in Ia type natural diamond , Galina Popovici, T. Sung, M. A. Prelas, and R. G. Wilson,
> accepted J. Appl. Phys.
>
> 19.Properties of diffused diamond films having n-type conductivity , Galina Popovici, M. A. Prelas, T. Sung, and S.
> Khasawinah, A. A. Melnikov, V. S. Varichenko, A. M. Zaitsev, W. R. Fahrner, presented at DF'94, Ciocco, Italy,
> 25-30 September 1994, to be published in Diamond and Related Materials
>
> 20.Diffusion of lithium, oxygen and boron in type IIa natural diamond , G. Popovici, T. Sung, M. A. Prelas, and S.
> Khasawinah, R. G. Wilson, accepted J. Appl. Phys..
>
> 21.Raman scattering characterization of (100) and (111) oriented diamond films grown in the same run by hot filament
> chemical vapor deposition , G. Popovici, S. Khasavinah, T. Sung, M. A. Prelas, B. V. Spitsyn, S. Loyalka, R.
> Tompson, J. Chamberlaine, and H. White, J. Mater. Research 9, 2839 (1994)
>
> 22.FTIR measurements of the hydrogen content of heat-treated diamond films , T. Sung, S. Khasawinah, G. Popovici, M.
> A. Prelas, B. V. Spitsyn, G. Mannig, S. Loyalka, R. Tompson, Diamond, SiC and Nitride Wide Bandgap
> Semiconductors, edited by C. H. Carter, G. Gildenblatt, S. Nakamura and R. Nemanich, (MRS, 1994) p. 643
>
> 23.Diffusion of impurities under bias in CVD diamond films , MRS Proc., MRS v. 339, Diamond, SiC and Nitride Wide
> Bandgap Semiconductors, edited by C. H. Carter, G. Gildenblatt, S. Nakamura and R. Nemanich, (MRS, 1994) p.
> 601
>
> 24.Nucleation and selective deposition of diamond thin films , G. Popovici, invited paper at the Diamond and Diamond-like
> Films Workshop, International Society for Hybrid Microelectronics, Breckenridge, CO, March 29-31, 1992
>
> 25.Parameters for an Aluminum Nitride VUV Solid-State Laser , M. Prelas, and H. Hora, Accepted to Lasers and
> Partilce Beams.
>
> 26.Parameter for a Diamond Solid State Laser , M. Prelas, and H. Hora, Accepted to Lasers and Particle Beams.
>
> 27.Wide Band-gap Photovoltaics , M. A. Prelas, UMC; G. Popovici, RDT; S. Khasawinah, and T. Sung, UMC, Wide
> Band-Gap Electronic Materials, Editors M. Prelas, P. Gielisse, G. Popovici, B. Spitsyn, and T. Stacy, Kluwer, p 463
> (1995).
>
> 28.Theoretical Aspects of Aluminum Nitride and Diamond in View of Laser and Photovoltaic Action, H. Hora, UR; R.
> Hopfl, HT; and M. A. Prelas, UMC, Wide Band-Gap Electronic Materials , Editors M. Prelas, P. Gielisse, G.
> Popovici, B. Spitsyn, and T. Stacy, Kluwer, p 487 (1995).
>
> 29.Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates , G.
> Popovici, C. H. Chao, M. A. Prelas, E. J. Charlson, and J. M. Meese, to be published in J. Mater. Research
>
> 30.Phase Transformation of smooth diamond Films grown by hot filament CVD on positively biased substrates, G.
> Popovici, C. H. Chao, M. A. Prelas, E. J. Charlson, and J. M. Meese, MRS v. 339, Diamond, SiC and Nitride Wide
> Bandgap Semiconductors, edited by C. H. Carter, G. Gildenblatt, S. Nakamura and R. Nemanich, (MRS, 1994)
> p.325
>
> 31.Properties of smooth diamond films obtained by biased hot filament chemical vapor deposition , G. Popovici, C. H.
> Chao, M. A. Prelas, E. J. Charlson, and J. M. Meese, accepted to J. Materials Research
>
> 32.Diamond photovoltaic cell as a first wall material and energy conversion system for inertial confinement fusion , M.
> Prelas, E. J. Charlson, E. M. Charlson, J. Meese, G. Popovici, and T. Stacy, Lasers and Beams, 11, 65 (1993)
>
> 33.Diamond photovoltaics in energy conversion , M. A. Prelas, E. J. Charlson, E. M. Charlson, J. Meese, G. Popovici, T.
> Stacy, Second International Conference on the Applications of Diamond Films and Related Materials, ed. M.
> Yoshikawa, M. Murakawa, Y. Tzeng and W. A. Yarbrough, August 25-27 1993, Tokio, Japan, p. 329
>
> 34.Hydrogen content in diamond films grown by hot filament chemical vapor deposition method, S. Khasavinah, T. Sung,
> B. Spitsyn, W. H. Miller, G. Popovici, M. A. Prelas, E. J. Charlson, E. M. Charlson, J. Meese, and T. Stacy, Diamond
> Materials, ed. J. P. Dismukes and K. V. Ravi, Electrochemical Society Proc. v.93-17, 1993, p. 1032-1035
>
> 35.Diamond photovoltaic cell as a first wall material and energy conversion system for inertial confinement fusion, M. A.
> Prelas, E. J. Charlson, E. M. Charlson, J. Meese, G. Popovici, and T. Stacy, US - Japan Seminar on Physics of High
> Power Laser Matter Interactions, Kyoto, Japan, March 9 - 13, 1992
>
> 36.Hydrogen content in diamond films grown by hot filament chemical vapor deposition method, S. Khasavinah, T. Sung,
> B. Spitsyn, W. H. Miller, G. Popovici, M. A. Prelas, E. J. Charlson, E. M. Charlson, J. Meese, and T. Stacy, 4th
> Diamond Technology Workshop, March 24-26, 1993 Madison, WI, USA
>
> 37.Synergism in Inertial Confinement Fusion: A Total Direct Energy Conversion Package, M. A. Prelas, E. J. Charlson,
> Lasers and Particle Beams, Vol. 7 (3), 449-466 (Aug 1989).
>
> 38.Advanced Nuclear Energy Conversion Using a Two Step Photon Intermediate Technique, M. A. Prelas, E. J.
> Charlson, F. P. Boody, and G. H. Miley, Prog. In Nuclear Energy, 23 (3), pp. 223-240 (1990).
>
> 39.Smooth films consisting of diamond and diamond polytypes grown by hot filament chemical vapor deposition on
> positively biased silicon substrates , C. H. Chao, G. Popovici, M. A. Prelas, E. J. Charlson, E. M. Charlson, and J. M.
> Meese, J. Crystal Growth, 140, 454 1994
>
> 40.Electrical characterization of aluminum nitride films on silicon grown by chemical vapor deposition, A.H. Khan, J.M.
> Meese, E. J. Charlson, E.M. Charlson, S. Khasawinah, T. Sung, G. Popovici, M. A. Prelas, MRS v. 339, Diamond,
> SiC and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter, G. Gildenblatt, S. Nakamura and R.
> Nemanich, (MRS, 1994) p.637
>
> 41.AlN on Diamond Thin Films grown by chemical vapor deposition methods,A.H. Khan, J.M. Meese, E. J. Charlson,
> E.M. Charlson, S. Khasawinah, T. Sung, G. Popovici, M. A. Prelas,SPIE/ v. 2151 1994, Diamond-Film
> Semiconductors (1994) edited by M. Tamor and M. Aslam, p.44
>
> 42.Large area uniform polycrystalline diamond thin film deposited using a four-hot-filament CVD process , G. Zhao, E. J.
> Charlson, J. C. Yu, B. Y. Liaw, E. M. Charlson, T. Stacy, J. Meese, M. Prelas, 10. G. Popovici, Second International
> Conference on the Applications of Diamond Films and Related Materials, ed. M. Yoshikawa, M. Murakawa, Y. Tzeng
> and W. A. Yarbrough, August 25-27 1993,Tokio, Japan, p. 515
>
> 43.Silver on diamond Schottky diodes formed on boron doped hot-filament chemical vapor deposited polycrystalline
> diamond films , G. Zhao, T. Stacy, E. J. Charlson, E. M. Charlson, C. H. Chao, M. Hajsaid, J. Meese, G. Popovici
> and M. A. Prelas, Appl. Phys. Lett., 61, 1119 (1992)
>
> 44.Effect of mechanical stress on polycrystalline diamond Schottky diodes characteristics , G. Zhao, E. J. Charlson, E. M.
> Charlson, T. Stacy, J. Meese, G. Popovici and M. A. Prelas, J. Appl. Phys, 73, 1832 (1993)
>
> 45.Rectifying contact formation with indium on polycrystalline p-type hot filament CVD deposited diamond utilizing
> molecular ion implantation , T. Stacy, G. Zhao, B. Y. Liaw, E. J. Charlson, E. M. Charlson, J. Meese, G. Popovici and
> M. A. Prelas, J. Appl. Phys, 74, 763 (1993)
>
> 46.Effect of mechanical stress on polycrystalline diamond Schottky diodes characteristics , G. Zhao, E. J. Charlson, E. M.
> Charlson, T. Stacy, J. Meese, G. Popovici and M. Prelas, Materials Research Society Proceedings, Novel Forms of
> Carbon, 270, 431-436 (1992)
>
> 47.Growth and characterization of boron-doped diamond thin films by hot filament chemical vapor deposition, C. H. Chao,
> E. J. Charlson, E. M. Charlson, J. Meese, G. Popovici and M. Prelas, 3rd Annual Diamond Technology Workshop,
> Detroit, March 17-18, 1992
>
> 48.Silver on diamond Schottky diodes formed on boron doped HFCVD grown diamond, G. Zhao, C. H. Chao, E. J.
> Charlson, E. M. Charlson, J. Meese, G. Popovici, M. Prelas, and T. Stacy, 3rd Annual Diamond Technology
> Workshop, Detroit, March 17-18, 1992
>
> 49.Effect of implanted methane on hot filament CVD diamond film growth, T. Stacy, G.Popovici, C. H. Chao, E. J.
> Charlson, E. M. Charlson, J. Meese, and M. A. Prelas, 3rd Annual Diamond Technology Workshop, Detroit, March
> 17-18, 1992
>
> 50.Growth of oriented Aluminum Nitride films on Si by chemical vapor deposition, A. H. Khan, M. F. Odeh, J. Meese, E.
> M. Charlson, E. J. Charlson, T. Stasy, G. Popovici, M. A. Prelas, and J. L. Wragg, J. of Mater. Sci. 29, 4314 (1994)
>
> 51.High quantum efficiency for Pt2Si Schottki-barrier diodes in the vacuum ultraviolet, M. Hajsaid, E. J. Charlson, E. M.
> Charlson, G. Zhao, J. Meese, T. Stacy, G. Popovici,and M. Prelas, J. Appl. Phys., 75, 7588 (1994)
>
> 52.Pt2 Si Schottky-barrier diodes characteristics for vacuum ultraviolet detection , M. Hajsaid, E. J. Charlson, E. M.
> Charlson, G. Zhao, J. Meese, T. Stacy, Z. He, G. Popovici,and M. Prelas, presented at 35-th Annual Meeting of the
> Division of Plasma Physics of the American Physical Society |
