Prelas patents that relate to THE GLUE and PASTE properties that will alow the CHIP of Silicon to be layered with Dust Plasma Daimonf Dope Derived FILM LAYERS:
PATENT
PLAQUES
Now available
US5597762: Field-enhanced diffusion using optical
activation
View Images (6 pages) | View Cart
Add to cart: PDF (~570 KB) | TIFF (~450 KB) | SmartPatent (~450 KB) | Fax | More choices...
Inventor(s):
Popovici; Galina , Columbia, MO
Prelas; Mark A. , Columbia, MO
Sung; T. , Columbia, MO
Khasawinah; S. , Columbia, MO
Applicant(s):
Nonophase Diamond Technologies, Inc., Vancouver, Canada
Issued/Filed Dates:
Jan. 28, 1997 / Sept. 27, 1994
Application Number:
US1994000313641
Priority Number(s):
US1994000313641
Abstract: A method of making a semiconductor material using a modified
forced diffusion method includes the steps of placing the
semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.
CROSS REF FIELDS at patent Office:
PATENT
PLAQUES
Now available
US4392928: Method of doping a semiconductor
View Images (6 pages) | View Cart
Add to cart: PDF (~570 KB) | TIFF (~450 KB) | SmartPatent (~450 KB) | Fax | More choices...
Inventor(s):
Yang; Chiang Y. , Miller Place, NY
Rapp; Robert A. , Columbus, OH
Applicant(s):
The United States of America as represented by the United States Department of Energy,
Washington, DC
Issued/Filed Dates:
July 12, 1983 / Jan. 26, 1982 E2 (Expired)
Application Number:
US1982000342683
IPC Class:
C25D 005/00;
Class:
Current: 205/766; 438/468; 438/558; 438/558;
Original: 204/130;
Field of Search:
204/130,228
Abstract:
A method for doping semiconductor material. An interface is
established between a solid electrolyte and a semiconductor to be
doped. The electrolyte is chosen to be an ionic conductor of the
selected impurity and the semiconductor material and electrolyte are
jointly chosen so that any compound formed from the impurity and
the semiconductor will have a free energy no lower than the
electrolyte. A potential is then established across the interface so as
to allow the impurity ions to diffuse into the semiconductor. In one
embodiment the semiconductor and electrolyte may be heated so as
to increase the diffusion coefficient.
#2-
US4251289: Gradient doping in amorphous silicon
US1979000108024
IPC Class:
C23C 015/00; H01L 031/04;
Class:
Current: 136/258; 204/192.25; 438/087; 438/092; 438/468; 438/558; 438/558;
Original: 136/255; 136/258; 148/188; 204/192.S; 204/192.P; 357/002; 357/015; 357/030;
Field of Search:
204/192 S,192 P 136/89 TF,255 357/2,15,30 148/188
Abstract:
An amorphous silicon semiconductor having a gradient doping profile
is produced by thermo-electrically diffusing an ionizable deposit
material such as antimony or aluminum, for example, into the
amorphous silicon layer. Embodied in a photovoltaic device, the
gradient doping profile increases the width of the depletion or barrier
region and concurrently ensures an ohmic contact between
amorphous silicon and current carrying electrodes.
Now to this Cross Ref To The Orinial there are 28 patentys related inwhich this is but one:
US1977000841369
IPC Class:
H01L 045/00;
Class:
Current: 252/2.3.E; 148/DIG.001; 204/192.25; 257/055; 257/930; 257/930;
Original: 357/002; 357/004; 357/061; 357/063; 252/063.5;
Field of Search:
357/2,4,5,61,63
Abstract:
An amorphous semiconductor member which is capable of
withstanding high temperatures and of having good toughness
characteristics comprises an amorphous semiconductor material
including a composition of a plurality elements, at least one of which
is a low atomic weight element comprising boron, carbon, nitrogen or
oxygen, formed in a solid amorphous host matrix having structural
configuration which have local rather than long range order and
electronic configurations providing an energy gap and an electrical
activation energy. It also includes a modifier material added to the
amorphous host matrix, such as a transition metal or rare earth
element, having orbitals which interact with the amorphous host
matrix and form electronic states in the energy gap which modify
substantially the electronic configurations of the amorphous host
matrix at room temperature and above. The amorphous
semiconductor member may also comprise an amorphous host
matrix formed from boron, carbon, silicon or germanium having a
modifier material of boron or carbon added thereto. The forming of the
amorphous host matrix and the adding of the modifier material is
preferably done by cosputtering or the like.
THUS, This URL reader and Paster...sees...a Dope of a Paste:
NUKE has it....Chucka-faster-smarter-BETTER
Chuck- QED, we await the PROOF, invest now, or invest later! Your choice! |
