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To: Curlton Latts who wrote (22885)	8/13/1999 5:53:00 PM
From: BillyG	Read Replies (1) \| Respond to of 25960

Trikon, International Sematech produce 25-nm trenches with optical lithography seminews.com A service of Semiconductor Business News, CMP Media Inc. Story posted 9 a.m. EST/6 a.m., PST, 8/13/99 NEWPORT, Wales -- A multinational team of researchers here announced today that it has developed advanced optical lithography, photoresist and etching capabilities that can produce trenches only 25 nanometers, or 0.025 micron, in width. The research project included Newport-based Trikon Technologies Ltd. and the Resist Test Center of International Sematech in Austin, Tex. In June, Trikon, in another collaboration with International Sematech successfully the production of semiconductor contact holes of 30 nm (see June 17 story). The trenches were produced using an advanced deep-ultraviolet 193-nm CARL photoresist system developed by researchers at Infineon Technologies AG in Erlangen, Germany. The process includes a unique chemical biasing step for definition of very small trenches and contact holes. Photolithography was performed on a 0.60 NA (numerical aperture) 193-nm microstepper using a standard binary reticle. Etch processes were carried out on Trikon Omega plasma etchers, using ICP and MORI plasma modules. "The small trenches can be filled with metals for interconnect or dielectrics for isolation, making even smaller circuits with greater function possible in the future," said Gerhard Gross, International Sematech's director of lithography.