SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?


To: Pravin Kamdar who wrote (70597)9/1/1999 2:13:00 PM
From: RDM  Respond to of 1577380
 
Watson is right.

They had to decrease the overall capacitance somewhat since the voltage change is not enough to provide a dramatic decrease in power while increasing speed.



To: Pravin Kamdar who wrote (70597)9/1/1999 2:29:00 PM
From: THE WATSONYOUTH  Respond to of 1577380
 
<They probably decreased the gate oxide thickness, as well. This could have the overall affect of increasing the gate capacitance. They probably also have shallower and higher doped source/drain. junctions -- again increasing pacitance. But, channel resistance and transit time should both be educed. Leakage should have increased. SOI would be very nice to have.>

Yea, it's hard to visualize AMD's device road map. They seem to mix and match voltage/gate oxide thickness/ channel length/etc. But at 2.2V, the K62 gate oxide would probably be limited to around 35A. The Athlon is limited to 1.7V so the gate oxide could be as thin as perhaps 27A. Unless Athlon is also 35A and is limited to 1.7V because of power. (Not a good design point and not likely the case) So, AMD probably has multiple device design points. It's somewhat hard to figure.

THE WATSONYOUTH