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To: Allen champ who wrote (29703)9/16/1999 3:53:00 PM
From: richard surckla  Read Replies (1) | Respond to of 93625
 
Here's a rather BIG DRIP from Hitachi...

HITACHI: Hitachi releases 144-Mbit Direct Rambus DRAM and 288-Mbyte RIMM

SEP 16, 1999, M2 Communications - Hitachi, Ltd. (TSE: 6501) today
announced the HM5512182FBT 144-Mbit direct Rambus DRAM (RDRAM(R)*1),
together with two 184-pin memory modules (RIMMs(TM)*2) incorporating
HM5512182FBT RDRAMs-the 288-Mbyte HB55A256ARR and the 144-Mbyte
HB55A128ARP-for use as main memory in servers, workstations, and PCs.
Sample shipments of the 144-Mbit RDRAM will begin in November 1999, and
sample shipments of the RIMMs in December.

Hitachi also announced the HM5512162FBT 128-Mbit direct RDRAM with no
ECC function*3. Sample shipments of this model will begin in March
2000.

The use of PCs, workstations, and servers in Internet and other
network systems and moving picture applications has brought a need for
faster processing of large quantities of data. The memory installed in
these devices must offer not only greater capacity, but also faster
data transfer between the memory controller and DRAM in order to
achieve high-speed processing.

In response to this demand, Hitachi has developed direct RDRAM and
RIMM products achieving a high data transfer speed of 1.6 Gbytes/sec.

The new products of the 144-Mbit HM5512182FBT and the 128-Mbit
HM5512162FBT use a 0.18micro meter CMOS process, and achieve a data
transfer frequency of 800 MHz (an operating frequency of 400 MHz) with
the industry's smallest chip size. They include a direct RDRAM
interface and perform data input/output in synchronization with the
rising and falling edges of an external clock, enabling a transfer
speed of 800 Mbits/sec per pin to be achieved. This gives a fast data
transfer speed of 1.6 Gbytes/sec per chip. Bank switching is performed
by means of 4-bank interleaved operation, making possible a 1.6
Gbytes/sec transfer speed while improving random access performance.

Products offering data transfer frequencies of 711 MHz and 600 MHz
are also available.

Moreover, Hitachi realizes 1.5 W (Typ.) low power consumption by
implementing optimum circuit design.

The power supply voltage is 2.5 V +/- 0.13 V, and a 0.8 V small-
amplitude RSL*4 is used in the interface to achieve high-speed
operation.

The 144-Mbit HM5512182FBT has a 256-kword x 18-bit x 32-bank
configuration, and is for use in memory systems with an ECC function.
Of the two RIMMs incorporating HM5512182FBT RDRAMs, the 288-Mbyte
HB55A256ARR has a 128-Mword x 18-bit (256-kword x512-bank x 18-bit)
configuration, while the 144-Mbyte HB55A128ARP has a 64-Mword x 18-bit
(256-kword x 256-bank x 18-bit) configuration.

The 128-Mbit HM5512162FBT, with a 256-kword x 16-bit x 32-bank
configuration, is for use in memory systems with no ECC function.

The package is a 54-pin BGA package.

Notes: 1. Rambus and RDRAM are registered trademarks of Rambus Inc. 2.
RIMM(TM): Rambus Inline Memory Module. RIMM is a trademark of Rambus Inc.
3. ECC: Error Checking and Correcting. A function that checks for and
corrects data errors in memory.

4. RSL: Rambus Signal Level

Typical Applications

PCs, servers, workstations, etc.

*M2 COMMUNICATIONS DISCLAIMS ALL LIABILITY FOR INFORMATION PROVIDED WITHIN
M2 PRESSWIRE. DATA SUPPLIED BY NAMED PARTY/PARTIES.*



(C)1994-99 M2 COMMUNICATIONS LTD