To: Allen champ who wrote (29703 ) 9/16/1999 3:53:00 PM From: richard surckla Read Replies (1) | Respond to of 93625
Here's a rather BIG DRIP from Hitachi... HITACHI: Hitachi releases 144-Mbit Direct Rambus DRAM and 288-Mbyte RIMM SEP 16, 1999, M2 Communications - Hitachi, Ltd. (TSE: 6501) today announced the HM5512182FBT 144-Mbit direct Rambus DRAM (RDRAM(R)*1), together with two 184-pin memory modules (RIMMs(TM)*2) incorporating HM5512182FBT RDRAMs-the 288-Mbyte HB55A256ARR and the 144-Mbyte HB55A128ARP-for use as main memory in servers, workstations, and PCs. Sample shipments of the 144-Mbit RDRAM will begin in November 1999, and sample shipments of the RIMMs in December. Hitachi also announced the HM5512162FBT 128-Mbit direct RDRAM with no ECC function*3. Sample shipments of this model will begin in March 2000. The use of PCs, workstations, and servers in Internet and other network systems and moving picture applications has brought a need for faster processing of large quantities of data. The memory installed in these devices must offer not only greater capacity, but also faster data transfer between the memory controller and DRAM in order to achieve high-speed processing. In response to this demand, Hitachi has developed direct RDRAM and RIMM products achieving a high data transfer speed of 1.6 Gbytes/sec. The new products of the 144-Mbit HM5512182FBT and the 128-Mbit HM5512162FBT use a 0.18micro meter CMOS process, and achieve a data transfer frequency of 800 MHz (an operating frequency of 400 MHz) with the industry's smallest chip size. They include a direct RDRAM interface and perform data input/output in synchronization with the rising and falling edges of an external clock, enabling a transfer speed of 800 Mbits/sec per pin to be achieved. This gives a fast data transfer speed of 1.6 Gbytes/sec per chip. Bank switching is performed by means of 4-bank interleaved operation, making possible a 1.6 Gbytes/sec transfer speed while improving random access performance. Products offering data transfer frequencies of 711 MHz and 600 MHz are also available. Moreover, Hitachi realizes 1.5 W (Typ.) low power consumption by implementing optimum circuit design. The power supply voltage is 2.5 V +/- 0.13 V, and a 0.8 V small- amplitude RSL*4 is used in the interface to achieve high-speed operation. The 144-Mbit HM5512182FBT has a 256-kword x 18-bit x 32-bank configuration, and is for use in memory systems with an ECC function. Of the two RIMMs incorporating HM5512182FBT RDRAMs, the 288-Mbyte HB55A256ARR has a 128-Mword x 18-bit (256-kword x512-bank x 18-bit) configuration, while the 144-Mbyte HB55A128ARP has a 64-Mword x 18-bit (256-kword x 256-bank x 18-bit) configuration. The 128-Mbit HM5512162FBT, with a 256-kword x 16-bit x 32-bank configuration, is for use in memory systems with no ECC function. The package is a 54-pin BGA package. Notes: 1. Rambus and RDRAM are registered trademarks of Rambus Inc. 2. RIMM(TM): Rambus Inline Memory Module. RIMM is a trademark of Rambus Inc. 3. ECC: Error Checking and Correcting. A function that checks for and corrects data errors in memory. 4. RSL: Rambus Signal Level Typical Applications PCs, servers, workstations, etc. *M2 COMMUNICATIONS DISCLAIMS ALL LIABILITY FOR INFORMATION PROVIDED WITHIN M2 PRESSWIRE. DATA SUPPLIED BY NAMED PARTY/PARTIES.* (C)1994-99 M2 COMMUNICATIONS LTD