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Politics : Formerly About Applied Materials -- Ignore unavailable to you. Want to Upgrade?

To: Tony Viola who wrote (33116)	11/9/1999 8:59:00 PM
From: Proud_Infidel	Respond to of 70976

Hyundai rolls out 0.15-micron 256-Mbit SDRAM A service of Semiconductor Business News, CMP Media Inc. SEOUL--Hyundai's MicroElectronics Group today announced samples of a second-generation 256-megabit synchronous DRAM for PC133 memory systems. The 256-Mbit SDRAM is being fabricated with a new 0.15-micron process that results in higher performance and potentially lower costs, said the semiconductor group of Hyundai Electronics Industries Co. Ltd. The new memory is capable of responding to microprocessor requests for data in 42.5 nanoseconds vs. 50 ns with conventional SDRAMs, according to Hyundai. The new SDRAM has a column address strobe (CAS) latency of 2 instead of a CAS latency of 3. Hyundai has been producing 256-Mbit SDRAMs with 0.18-micron processes. The new 0.15-micron process enables the Korean chip maker to produce more devices on an 8-inch wafer as well as increase the speed of the memory circuit. Qualified as a PC133 part, the new chip actually can achieve 166-MHz speed, the company said. The sampling price for the new part is about $130. Full production is slated to begin in the second quarter of next year. Hyundai MicroElectronics said it also expects to make available 512-megabyte and 1-gigabyte memory modules using the new 256-Mbit SDRAM in the same time frame. Industry sources said Hyundai is using ASM Lithography's 248-nm step-and-repeat tool in the 0.15-micron process. The ASML 248-nm wavelength krypton fluoride laser scanner is the same scanner used by Hyundai to make DRAMs with its 0.18-micron processes.