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To: Proud_Infidel who wrote (3623)	11/10/1999 11:10:00 PM
From: FJB	Read Replies (1) \| Respond to of 5867

Couple of good articles on foundries here. eb-mag.com

To: Proud_Infidel who wrote (3623)	11/12/1999 11:12:00 AM
From: Duker	Read Replies (3) \| Respond to of 5867

FROM THE CAN'T WIN 'EM ALL FILE: AMD adopts TEL's cobalt silicide etcher for Fab 25 semibiznews.com AUSTIN, Tex. -- Advanced Micro Devices Inc. has qualified Tokyo Electron Ltd. Inc.'s Unity DRM as its preferred oxide etcher for local interconnect applications involving cobalt silicide (CoSi). The TEL etcher is used at AMD's Fab 25 in Austin, which manufactures the Athlon microprocessors. Migrating to CoSi from titanium silicide (TiSi) for smaller gate designs has allowed AMD to push the speeds of these processors as high as 700 MHz, the company said. Some of the key features of the DRM's CoSi process are high selectivity to CoSi, tight critical dimension (CD) control, reduced consumables cost and a robust endpoint system. AMD said the oxide etcher's CoSi process performance helped it quickly reach high-volume production of its 0.25-micron technology. "An unprecedented level of cooperation with TEL resulted in a robust reactor design that has allowed us to achieve rapid deployment of a highly stable process for our critical local interconnect layer into high volume manufacturing," said John Behnke, AMD Fab 25's etch module manager. "AMD chose the Unity DRM oxide etcher for its strategic local interconnect process because of its suitability for high volume manufacturing, superior CD control, highly selective process and precise chamber matching," said Randy Blair, AMD Fab 25 director.TEL has demonstrated the DRM's process extendibility for other selective etch applications and small feature sizes to 0.07 micron in its applications lab. Its damascene etch capabilities have been demonstrated for oxide, as well as the full gamut of low-k materials from spin-on to CVD low-k materials.