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To: kinkblot who wrote (942)	11/14/1999 2:54:00 PM
From: John Finley	Read Replies (2) \| Respond to of 1820

Truly amazing that they can manufacture 8" wafers with their Smart Cut© technology. In my previous life we put epitaxial superconductor on the sapphire of a silicon on sapphire wafer. The naval research folks had fabricated CMOS devices on the Si. After we patterned a SQUID (Superconducting QUantum Interference Device) in the superconductor the wafer had both working superconducting and CMOS devices on the same (Al2O3) substrate. Useless, I might add, but proof of concept. If I remember right the 4" SOS wafers were ~$400 apiece. I guess with the "cleaving" technology you effectively get two device surfaces instead of one surface with the old SOS technology. Thanks for the links, Will. JF

To: kinkblot who wrote (942)	1/24/2000 11:41:00 AM
From: kinkblot	Read Replies (1) \| Respond to of 1820

www-dta.cea.fr {new URL, site updated 12/16/99} From "de Simox a Smart cut" page 3: Le procédé SMART-CUT peut s'utiliser de façon beaucoup plus générale : un film monocristallin de silicium peut être transféré sur tout type de substrat. Il suffit que le substrat puisse être lié à une plaquette de silicium nu ou recouvert d'une couche diélectrique et que la structure ainsi constituée résiste à des températures de 400°C à 600°C. Des résultats intéressants ont été obtenus dans le cadre de la collaboration LETI-SOITEC sur le silicium sur verre et le silicium sur silice (quartz) pour les applications d'écrans plats pour affichage. babelfish.altavista.com -- for translation Separation is accomplished by thermal treatment at 400°C to 600°C which causes rupture along the hydrogen-implanted defect zone. WT