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Politics : Formerly About Applied Materials -- Ignore unavailable to you. Want to Upgrade?

To: Henry Eichorszt who wrote (33307)	11/22/1999 12:37:00 PM
From: Proud_Infidel	Respond to of 70976

NEC-Hitachi DRAM venture reportedly to include 300-mm fab Semiconductor Business News (11/22/99, 11:20:13 AM EDT) TOKYO -- NEC Corp. here said today that in about two weeks it will announce plans for expanding its DRAM joint venture with Hitachi Ltd., which reportedly will include a new 300-mm wafer fab. Neither firm would release any details, but Japan's Nihon Zeizai Shimbun business newspaper reported that the expanded joint venture will take over Hitatchi's Singapore DRAM fab and NEC's DRAM fab in Hiroshima. The paper said the new operation would launch construction of a next-generation 300-mm wafer fab in Hiroshima to start production in 2002. NEC reportedly would continue to operate separately its DRAM fabs in the U.K.; Roseville, Calif.; and Kyushu, Japan. NEC and Hitachi earlier this year formed the DRAM jont venture, but initially only to work cooperatively on developing the next generation DRAM (see