Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Technology Stocks : WDC/Sandisk Corporation -- Ignore unavailable to you. Want to Upgrade?

To: Binx Bolling who wrote (8220)	11/23/1999 1:40:00 PM
From: Binx Bolling	Read Replies (3) \| Respond to of 60323

Micron Technology Announces SyncFlash Memory, A New Flash Memory Technology; Micron Integrates the Benefits of Non-Volatile Storage Technology with Industry-Standard DRAM Architectures -------------------------------------------------------------------------------- BOISE, Idaho--(BUSINESS WIRE) via NewsEdge Corporation -- Micron Technology, Inc. (NYSE:MU) today introduced SyncFlash(TM) technology, its latest addition to its growing flash product line. For the first time in main memory architecture, DRAM and SyncFlash memory can reside on the same bus and execute from a single DRAM memory controller. This simplifies system busing, eliminating the additional pins needed for a separate flash-only memory interface, increasing flash READ performance to DRAM speeds, complementing SDRAM in systems where SyncFlash memory is preloaded for execute-in-place applications. "SyncFlash technology makes the quantum leap from a traditional flash product interface to a standard DRAM interface with SDRAM timing specifications," said Kevin Widmer, Flash Strategic Marketing Manager for Micron. "SyncFlash memory adds the benefits of non-volatile storage technology to industry-standard DRAM architectures. We see numerous benefits resulting from the integration of SyncFlash memory, including significant performance increases and reduced device counts resulting in an improved performance/cost ratio." The 4 bank architecture of 64Mb SyncFlash memory is the same as the equivalent SDRAM, and SDRAM interface commands are supported with minimal or no changes to a standard SDRAM controller. SyncFlash memory will be the first flash technology to simultaneously sense 4K-bit/bank and achieve RAS/CAS SDRAM read timings of 100MHz with zero wait states for high-speed execute-in-place applications. Micron expects to sample the first SyncFlash memory products during the first half of next year. "Micron continues to show its leadership in the industry through technology developments, such as SyncFlash memory," said Darrell Rinerson, Vice President, Flash Memory for Micron. "SyncFlash memory is a high-performance, cost-effective solution for a wide-range of applications. Our customers want the ability to choose the memory technologies best meeting their performance versus cost requirements, and Micron is committed to offering our customers a choice through the development of new memory technologies. " A typical application is a high-performance WinCE(TM) appliance that boots off ROM or Flash and loads 16MBytes of WinCE code into SDRAM. Rather than copy ROM/Flash into SDRAM, or limit the performance with slower sync-ROM or burst flash, redundant SDRAM can be replaced with SyncFlash memory and the ROM/Flash can be eliminated. The WinCE OS can be preloaded in SyncFlash memory resulting in a cost efficient, high performance system. Micron Technology, Inc., and its subsidiaries manufacture and market DRAMs, very fast SRAMs, Flash, other semiconductor components, memory modules, graphics accelerators, and personal computer systems. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the symbol MU. To learn more about Micron Technology, Inc., visit its web site at www.micron.com <<Business Wire, 11-22-99, 10:04 Eastern>> CONTACT: Micron Technology, Inc. \| Echo Sarlya, 208/368-4400 \| micron.com \| Fax-On-Demand: 800/239-0337