SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Energy Conversion Devices -- Ignore unavailable to you. Want to Upgrade?


To: fred whitridge who wrote (4281)12/4/1999 6:37:00 PM
From: Ray  Respond to of 8393
 
Fred, news about the vertical transistor state-of-the-art is also covered in the 29 Nov Issue of EE times: eet.com

Two other next generation transistors (major use in perhaps 10 years) are also reviewed in this article. IBM is working with 0.05 micron design rules for, I assume , a more normal construction, and Hitachi is working on a "fin" structure transistor for the sub-micron regime.

Since OUM memory elements are only limited by chip fabrication techniques, I assume these developments are good news for us -- OUM could probably be built with the new transistors, while other memory elements might not be miniaturizable enough. However, I think it will take a Tyler Lowery level person to make reasonably reliable predictions about this.



To: fred whitridge who wrote (4281)12/4/1999 10:30:00 PM
From: Futurist  Read Replies (1) | Respond to of 8393
 
How did you hear that we're done with Ruder Finn?