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Technology Stocks : Cymer (CYMI) -- Ignore unavailable to you. Want to Upgrade?

To: Curlton Latts who wrote (23771)	12/10/1999 10:55:00 AM
From: Ira Player	Respond to of 25960

When lacking facts - attack personally. Belive me, I'm not attacking. Cult like behavior is often characterized by ignoring the facts. You have been bullish on CYMI for as long as I can remember. From the highs in April 98 through the lows in October, to the rise in February 99 through the lows from April to June, never a negative word. It will recover, ride it out, CYMI forever, pray, pray, pray... When lacking facts? 1. You referenced my post as a negative example regarding covered calls, when covered calls wasn't even an issue in my post. 2. You claim to have bought the same 675 shares that I bought because you didn't read what was written carefully. I have not made any factual misrepresentations in this chain. I have only pointed out yours. Goodbye MR. Latts, Ira

To: Curlton Latts who wrote (23771)	12/10/1999 11:17:00 AM
From: Ian@SI	Read Replies (1) \| Respond to of 25960

Curly, Looks like you've been vindicated again. Seems as if INTC has extended the life cycle of CYMI's 248nm lasers. Ian. ++++++++++++ Intel pushes Pentium III past 800 MHz with process tweak By Peter Clarke EE Times (12/10/99, 10:02:39 AM EDT) WASHINGTON ( ChipWire/EET) -- Intel Corp. is manufacturing Pentium III microprocessors with better than 800-MHz clock frequencies by using a refinement of CMOS process technology described by researchers at this week's International Electron Devices Meeting. The "notched-poly" process refinement described by Tahir Ghani, senior engineer with Intel's logic technology development group in Portland, Ore., has already been included in Intel's 0.18-micron CMOS process and in circuits manufactured with transistor gate lengths of 0.10 micron (100 nanometers). At a session after his presentation, Ghani said Intel had "made Pentium III devices but not shipped [them] yet." He later qualified that statement, saying, "Some devices have shipped, but we haven't announced that yet." Regardless, "The clock frequency is better than 800 MHz," Ghani said. The development strayed from the norm at IEDM, where technology described in presentations normally shows up in circuit implementations at the International Solid-State Circuits Conference (ISSCC) the following year or sometimes two or more years later. Intel's 0.18-micron process technology normally produces transistors with a 0.13-micron gate length, but in his presentation Ghani said a method had been devised that allowed a notch to be introduced at the bottom of each transistor's polysilicon gate, thereby narrowing the gate length to 100 nm. Another advantage of the notched-poly process is that it allows the continued use of 248-nm lithography, Ghani said. The shorter gate length, together with other refinements described in the paper, reduces the gate capacitance and allows circuits to be built with higher-speed performance at a reduced operating voltage -- 1.2 to 1.5 V -- and with higher current drive and low leakage current. "The drive current is increased by about 10%," said Ghani. He would not offer specifics on Intel's method for making the gate-shortening notches, but he did say that it's "cost-free" (implying that it requires no extra process steps) and that the lateral and vertical dimensions of the notch are highly controllable -- an important factor in repeatability and reliability. Ghani added that Intel uses a 16-Mbit SRAM design as a test vehicle for its 0.18-micron process node and that such an SRAM, operating at a 1.16-GHz clock frequency, has been built using the notched-poly process. More details on that circuit are due to be revealed in February. Other features of the notched-poly refinement are an optimization of the source and drain doping implantation and annealing and a change from a titanium to a cobalt salicidation process, but Ghani stressed that no change was required to Intel's standard gate oxide or its 2-nm thickness. Noting that reliability of the gate oxide is a major concern with leading-edge processes, Ghani said tests indicated the new configuration would exhibit a lifetime in excess of 10 years at 1.5-V operation. "The variations are similar to what we see for straight poly," he said. "The oxide is extremely robust."