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To: Binx Bolling who wrote (8489)12/22/1999 11:14:00 PM
From: Binx Bolling  Read Replies (1) | Respond to of 60323
 
Toshiba adds 128M flash


December 22, 1999

--------------------------------------------------------------------------------

IRVINE, CALIF. - Toshiba America Electronic Components Inc. (TAEC) has introduced 128-Mbit NAND single-level cell flash memories in a thin-small outline package Type I and in SmartMedia floppy disk card packaging with 16 Mbytes of removable storage.

The 128-Mbit parts complement 256-Mbit and 512-Mbit single-level cell devices introduced by Toshiba this year. The new parts use a 3.3-V power supply and have identical page and block specifications.

"NAND flash memory is the de facto standard for solid state storage applications because of its high-speed programming capability, high-speed erasing and small block size," said Jackie Traeumer, business development manager for NAND flash memory products.

Toshiba will make the memories-TC58128FT for the TSOP and TC58128DC for the disk card package-on a 0.25-micron process at its Yokkaichi Works facility in Japan. Its previous generation of 128-Mbit NAND used two 64-Mbit components at 0.4-micron. Samples are available now, priced at $28 and $31, respectively. Production quantities will be available in the first quarter.

Call (800) 879-4963, ext.260

www.toshiba.com/taec

EETInfo No. 620

Copyright c 1999 CMP Media Inc.

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To: Binx Bolling who wrote (8489)12/22/1999 11:18:00 PM
From: JB  Respond to of 60323
 
<OT> Wow, great post, thanks for the info. One of the things I like most about SI is the high caliber of the folks posting on it. Another play on low density flash devices is a little company called Catalyst. Starting to finally make some movement, but still only on BB. Any thoughts on Smart M. as well??