To: Edscharp who wrote (106 ) 1/1/2000 8:45:00 PM From: Gofer Read Replies (1) | Respond to of 322
This news is a bit dated (from October), but I thought I'd post it anyway. Notice the 100m range. SiGe Microsystems Introduces New Power Amplifier for Bluetooth SiGe Microsystems introduces the second generation of their Bluetooth power amplifier (PA). The new silicon-germanium (SiGe) enhanced power amplifier boosts class II Bluetooth radios to power class I, 100 m range applications. The amplifier, model PA2423M, features low current, 160 mA total including the bias network current, and better than 45% power added efficiency (PAE). It produces +23.5 dBm with 20 dB gain and includes power down plus output power control pins. SiGe uses a single supply voltage of 2.7 to 3.6 volts typical and operates with up to 6.0 volts applied during battery charging. PA2423M is offered on tape and reel in the smaller 3 by 3 mm MSOP 8 pins package. Evaluation boards are also available at US$250.00 each. SiGe Microsystems designs and supplies low phase noise, low power consumption Silicon-Germanium enhanced integrated circuits for wireless on-premises (WLAN, HomeRF, Bluetooth) and last-mile (LMDS & Cable) broadband access communications. SiGe Microsystems can be reached at sige.com or +1 (613) 748-1334. Unfortunatly Sige is privately held, but they're doing a U$10 million private placement this quarter. Minimum investment (I believe) is $1 million. Better hurry the last placement sold quickly and was oversubscribed. P.S. - I don't think there'll be any Bluetooth "pure plays" in chips. Anyone doing Bluetooth ICs will already be doing other types of RF devices, but there may be pure plays in software a/o consumer products. I just don't know any (but I'm looking too).