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To: unclewest who wrote (1482)1/9/2000 8:28:00 AM
From: unclewest  Read Replies (2) | Respond to of 10714
 
from cree club

Cree was listed in Microwave & RF Magazine's December issue in the "Top Products of 1999" article, see:
sites.penton.com ml

Quote:
"Not to be outdone by the ICs, two discrete devices made the Top Products list for 1999, the SD2923 N-channel metal-oxide semiconductor field-effect transistor (MOSFET) from STMicroelectronics (Montgomeryville, PA) and the CRF-20010 MESFET from Cree Research (Durham, CA)--the first commercial power transistor based on silicon carbide (SiC). The former is a single-ended, gold (Au)-metallized vertical MOSFET designed to generate as much as 300-W CW power through 150 MHz. It yields typical gain of 22 dB and efficiency of 55 percent at 30 MHz, with a low junction-to-case thermal resistance of 0.27øC/W for maximum power dissipation of approximately 650W.

The latter transistor leverages Cree's experience with SiC to achieve 10-W output power from 400 to 2500 MHz, with 12-dB gain at 2 GHz."