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To: denni who wrote (36562)	1/16/2000 9:19:00 PM
From: Don Green	Respond to of 93625

Samsung, Intel, 4 Others To Jointly Develop New DRAM Technology Monday, January 17, 2000 SEOUL (Dow Jones)--Six leading computer memory-chip makers have agreed to cooperate in the development of new dynamic random access memory, or DRAM, technology, South Korea's Samsung Electronics Co. and Hyundai Electronics Industries Co. said Monday. The six participating companies are Samsung, Hyundai, Intel Corp., Micron Technology Inc., NEC Corp. and Infineon Technologies AG of Germany. Under the terms of the agreement, the companies will cooperate with one another and with "industry participants to develop the architecture, electrical and physical design, and related infrastructure for this advanced DRAM technology," the companies said in a press release. The new DRAM technology is expected to be available for potential applications in 2003, the companies said. "The developers will enable the adoption of this advanced DRAM technology by providing application, design and other information needed to develop future chipsets, platforms and other elements critical to bringing the future memory technology to market," they said. Interested companies will be able to access design information, and provide input to the development process, by entering into a participant's agreement during the development process, the companies said. Specifications will be provided to participants for review and feedback, and final specifications will be made available to all interested parties, they said. "This cooperative development effort between developers and participants will help ensure the DRAM roadmap is consistent with microprocessor and system architecture evolution in a variety of future systems," they said. Nikkei Shimbum