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To: Gus who wrote (1889)2/7/2000 3:35:00 AM
From: FLSTF97  Read Replies (1) | Respond to of 10714
 
nitres.com

I saw this device referenced as setting a new world record. Apparently it's figure of merit is 1000's of times better than comparable devices in GaAs.

I present this here for two reasons:

1)The device is built on SiC
2)From a device standpoint they would compete with Cree.

I believe one of the principles of this firm was a leading researcher at UCSB. He was also a collaborator with the researcher from Nichia who made the break throughs on GaN and who is now at UCSB.

BTW I believe his stay at UCSB will likely only be a few years and he will return to Nichia. This would be typical behavior, but occasionally some brave Japanese fall in love with the quality of life here and decide to stay.

FATBOY



To: Gus who wrote (1889)2/7/2000 10:21:00 AM
From: Guy Gordon  Read Replies (2) | Respond to of 10714
 
Gus,

We may be talking two different things. I'm certain Nakamura's work was on GaN. I have no idea what Nichia is using for production LEDs.